Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ke-zhao Liu"'
Autor:
Shou-chuang CHEN, Huo-ping ZHONG, Yin HU, Li-zhu LUO, Zhong LONG, Bin SU, Bin BAI, Ke-zhao LIU
Publikováno v:
He huaxue yu fangshe huaxue, Vol 46, Iss 3, Pp 185-192 (2024)
Uranium metal and alloys can be easily oxidized by the O-containing species such as O2 and H2O, etc. in atmosphere. Furthermore, the existence of H2 may also accelerates the oxidation of uranium metal. To prevent the corrosion of these materials, man
Externí odkaz:
https://doaj.org/article/02253809516c4a718b32688f1f8804f0
Autor:
Lu Cai, Chuan-hui Liang, Xueyang Lv, Wei Jin, Lin-sen Zhou, Jun Hu, Dong-ping Wang, Xin-chun Mao, Biao Hu, Sen Yang, Hailong Xing, Xiaohong Chen, Ke-zhao Liu, Aart W. Kleyn, Chang-an Chen
Publikováno v:
Nuclear Materials and Energy, Vol 24, Iss , Pp 100762- (2020)
The microstructure of tungsten, a primary candidate for the first wall of Tokamak devices, affects the retention and permeation of hydrogen isotopes. These have a close connection to the tritium inventory. In this work, the tungsten microstructure wa
Externí odkaz:
https://doaj.org/article/b8c4c6fbca9f45b9aeef38c91dec3cc9
Autor:
Yin Hu, Ao-Ke Jiang, Zhong Long, Yan-Zhi Zhang, Hong Xiao, Kang-Wei Zhu, Ya-Wen Zhao, Rong-Guang Zeng, sup> 中国工程物理研究院,四川绵阳 ,, sup> 表面物理与化学重点实验室,四川绵阳 ,, Lei Zhang, Ke-Zhao Liu
Publikováno v:
Acta Physico-Chimica Sinica. 33:364-369
Autor:
Hong Xiao, Zhang Lian Hong, Zhong Long, Fang Fang Li, Jian Feng Xu, Shi Feng Zhou, Ke Zhao Liu
Publikováno v:
Advanced Materials Research. 465:283-286
Me/MeN/Me (Me=Al, Ti ) multilayer thin films were deposited on silicon substrates by a multi-arc ion plating method (MAIP) and successive magnetron sputtering method (MS) respectively. The as-prepared and heat-treated films were characterized by scan
Publikováno v:
Materials Science Forum. :1753-1756
Molecular dynamics (MD) methods are utilized to study the displacement cascades in α-Fe containing different concentrations of substitutional He atoms. Primary knock-on atom (PKA) energies, Ep, from o.5 keV to 20 keV are considered at a temperature
Publikováno v:
Inorganic Chemistry; 3/20/2017, Vol. 56 Issue 6, p3550-3555, 6p