Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ke-Yue Wu"'
Autor:
Guo-Xia Guo, Ke-Yue Wu, Xiao-Yong Zhang, Fu-Xiang Lai, Karl Wah-Keung Tsim, Qi-Wei Qin, Wei-Hui Hu
Publikováno v:
Journal of Ethnopharmacology. 308:116299
Autor:
Ke-Yue Wu, Yong-Chun Liu, Li Mo, Zu-Wang Sun, Zhi-Ying Liu, Zi-Hui Chen, Ri-Ming Huang, Xiaoyong Zhang
Publikováno v:
SSRN Electronic Journal.
Autor:
Ke Yue Wu, Jing Biao Cui
Publikováno v:
Solid State Phenomena. 298:175-180
ZnO decorated-TiO2 nanosheets with exposed {001} facets were achieved by a simple hydrothermal method. The size and shape of ZnO nanoparticles were controlled by tuning the growth temperature. SEM, HRTEM, and SAED measurements confirmed the formation
Autor:
Ke Yue Wu, Qing Qing Fang, Wei Na Wang, Chang Zhou, Wen Juan Huang, Jin Guang Li, Qing Rong Lv, Yan Mei Liu, Qi Ping Zhang, Han Ming Zhang
Publikováno v:
Journal of Applied Physics; Oct2010, Vol. 108 Issue 6, p063530, 5p, 6 Graphs
Autor:
Feng Jin, Li Xu, Rong-Tao Zhang, Hai-Xu Wang, Cao-Jian Qin, Ke-Yue Wu, Shi-Rong Liu, Shui-Jie Qin
Publikováno v:
Modern Physics Letters B. 22:2987-2992
Stimulated emission has been observed from oxide structure of silicon when optically excited by 514 nm laser. The twin peaks in the region from 690 nm to 700 nm are dominated by stimulated emission which can be demonstrated by its threshold behavior
Autor:
Rong-Tao Zhang, Hai-Xu Wang, Ke-Yue Wu, Shui-Jie Qin, Wei-Qi Huang, Feng Jin, Cao-Jian Qin, Li Xu, Shi-Rong Liu
Publikováno v:
Optics Communications. 281:5229-5233
Stimulated emission has been observed from oxide structure of silicon when optically excited by 514 nm laser. The photoluminescence (PL) pulse has a Lorentzian shape with a full width at half maximum (FWHM) of 0.5–0.6 nm. The twin peaks at 694 nm a
Publikováno v:
Frontiers of Physics in China. 2:72-75
Some kinds of low-dimensional nanostructures can be formed by the irradiation of laser on a pure silicon sample and SiGe alloy sample. We have studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe wh
Autor:
Yan Mei Liu, Qing Qing Fang, Ke Yue Wu, Qing Rong Lv, Han Ming Zhang, Qi Ping Zhang, Wei Na Wang, Wen Juan Huang, Jin Guang Li, Chang Zhou
Publikováno v:
Journal of Applied Physics. 108:063530
Nitrogen (N)-doped ZnO thin films have been deposited on Si (100) substrates by pulsed laser deposition under different N2 pressures. The optical and magnetic properties of N-doped ZnO films have been studied with photoluminescence, Raman spectroscop
Publikováno v:
Applied Physics Letters. 92:221910
We have demonstrated a stimulated photoluminescence (PL) at 694 and 692nm whose emission peak has a Lorentzian shape with a full width at half maximum of 0.5–0.6nm. This stimulated emission comes from the nanostructures on porous silicon oxidized f
Publikováno v:
Journal of Applied Physics. 102:053517
We report the fabrication of low-dimensional structures by irradiation of a laser on the silicon sample and on the SiGe alloy sample. The physical mechanism forming a kind of hole-net structure of silicon could be explained with the theory of the har