Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ke-Lu Zhang"'
Autor:
Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la
Externí odkaz:
https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376
Autor:
Ke-Lu Zhang, Xiao-Ran Cui, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu, Jing-Lun Li, Ding Ying, Su Xiangbin, Ben Ma, Ze-Sheng Chen
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with
Publikováno v:
Advanced Functional Materials ISBN: 9789811301094
2 μm high-power GaSb-based type-I quantum well diode lasers were fabricated in this study. Under direct current, the output power of the lasers with uncoated cavity length of 2 mm and 100-μm-wide ridge is about 0.533 W with injection current of 3 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0772d335ee829d42f485e76d895ab832
https://doi.org/10.1007/978-981-13-0110-0_40
https://doi.org/10.1007/978-981-13-0110-0_40