Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Ke-Jing Lee"'
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1851 (2023)
Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depe
Externí odkaz:
https://doaj.org/article/179b96a5ac4449668f9c8200b291717c
Publikováno v:
Nanomaterials, Vol 12, Iss 24, p 4412 (2022)
The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM
Externí odkaz:
https://doaj.org/article/d46a65c155b144b0aebccae16ecbd039
Autor:
Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 18, p 3252 (2022)
We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO2 thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic properti
Externí odkaz:
https://doaj.org/article/bf9a357aaada43e58a23a2e7c5448b68
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 518-524 (2018)
The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R)
Externí odkaz:
https://doaj.org/article/c2e56cae4de34100a2165bd813f53905
Autor:
Ke-Jing Lee, Yeong-Her Wang
Publikováno v:
Gels, Vol 8, Iss 1, p 20 (2021)
Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to inves
Externí odkaz:
https://doaj.org/article/5b5ce0a8e9cd4430bc0bd6c13e64cf76
Publikováno v:
Sensors, Vol 21, Iss 8, p 2825 (2021)
Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discuss
Externí odkaz:
https://doaj.org/article/f400c592b15c4e44929293f46363eda6
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 321-327 (2016)
High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. Th
Externí odkaz:
https://doaj.org/article/2973074788e045099b4e2f1b187a8b54
Publikováno v:
IEEE Journal on Flexible Electronics. 1:207-213
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6106523da3743e99112ff16c96f7cc5d
https://doi.org/10.1109/jflex.2022.3217432
https://doi.org/10.1109/jflex.2022.3217432
Publikováno v:
IEEE Electron Device Letters. 43:1463-1466
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653bf2c290c8bb60394497c270fda870
https://doi.org/10.1109/led.2022.3188664
https://doi.org/10.1109/led.2022.3188664
Autor:
Parthasarathi Pal, Ke-Jing Lee, Sunanda Thunder, Sourav De, Po-Tsang Huang, Thomas Kampfe, Yeong-Her Wang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4737-4743
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08bf44602cf6e4973b9c1533cc2f9456
https://doi.org/10.1109/ted.2022.3186965
https://doi.org/10.1109/ted.2022.3186965