Zobrazeno 1 - 10
of 464
pro vyhledávání: '"Ke-Horng Chen"'
Autor:
Jian-Hsing Lee, Chih-Cherng Liao, Yeh-Jen Huang, Ching-Ho Li, Li-Yang Hong, Yeh-Ning Jou, Ke-Horng Chen
Publikováno v:
Energies, Vol 15, Iss 20, p 7608 (2022)
Without the Fluorinert solution and proper pad design, the high–voltage (HV) transistor used during the DC breakdown voltage (Vbk) measurement might be damaged by the partial discharge (PD) in the air if its Vbk is close to one thousand volts or mo
Externí odkaz:
https://doaj.org/article/1b8ff13d39b24d17811cd1c0bb9f998b
Autor:
Ke-Horng Chen, 陳科宏
91
The strong demand from the field of portable electronics and the mobile communications market creates the innovative and methodologies to achieve low-voltage and low-power designs. It is obvious that power efficiency cant be achieved withou
The strong demand from the field of portable electronics and the mobile communications market creates the innovative and methodologies to achieve low-voltage and low-power designs. It is obvious that power efficiency cant be achieved withou
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/80835246800830592678
Autor:
Ke-Horng Chen, 陳科宏
84
We present two methods to estimate power consumption of CMOS circuits. In the first method, we introduce a power dissipation model considering both the short and dynamic power dissipation of CMOS gates, and an unbounded delay model for dealin
We present two methods to estimate power consumption of CMOS circuits. In the first method, we introduce a power dissipation model considering both the short and dynamic power dissipation of CMOS gates, and an unbounded delay model for dealin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/88778403974985667575
Autor:
Yong-Hwa Wen, Tz-Wun Wang, Tzu-Hsien Yang, Sheng-Hsi Hung, Kuo-Lin Zheng, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:497-507
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818c24993c8772810dac5d9918f19eb2
https://doi.org/10.1109/jssc.2022.3181792
https://doi.org/10.1109/jssc.2022.3181792
Autor:
Bo-Hao Chen, Tzu-Ying Wu, Kuo-Lin Zheng, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:486-496
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083b4fe8e7f7acfe5d3ecd4ce51393a3
https://doi.org/10.1109/jssc.2022.3185158
https://doi.org/10.1109/jssc.2022.3185158
Autor:
Si-Yi Li, Sheng Cheng Lee, Sheng-Hsi Hung, Zheng-Lun Huang, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. :1-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f449671791703b9579a8f4ad291769
https://doi.org/10.1109/jssc.2023.3269026
https://doi.org/10.1109/jssc.2023.3269026
Autor:
Ya-Ting Hsu, Kai-Cheng Chung, Yu-Jheng Ouyang, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Solid-State Circuits Letters. 6:89-92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e174dddcb9e2eb37f412475d9ecb34f
https://doi.org/10.1109/lssc.2023.3260952
https://doi.org/10.1109/lssc.2023.3260952
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Der-Hsien Lien, Wen-Chin Lin, Tien-Han Yu, Yu-Sheng Chiu, D Godwinraj, D Godfrey, Chien-Hung Wu
Publikováno v:
Journal of Electronic Materials. 52:1391-1399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b4fdff46dd33ec18ca9ce220050de3
https://doi.org/10.1007/s11664-022-10087-x
https://doi.org/10.1007/s11664-022-10087-x
Autor:
Tz-Wun Wang, Yu-Yung Kao, Sheng-Hsi Hung, Yong-Hwa Wen, Tzu-Hsien Yang, Si-Yi Li, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3877-3888
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d19f689ca60cbe2ae4a3705ddfc7836
https://doi.org/10.1109/jssc.2022.3200381
https://doi.org/10.1109/jssc.2022.3200381
Autor:
Chong-Sin Huang, Tzu-Yu Tzeng, Wei-Cheng Huang, Yi-Hsiang Kao, Jie-Lin Wu, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:3361-3369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d615d3e30ca5ca5ae2e0dd5d52b7d4
https://doi.org/10.1109/jssc.2022.3172862
https://doi.org/10.1109/jssc.2022.3172862