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Autor:
Müller, J., Böscke, T.S., Bräuhaus, D., Schröder, U., Böttger, U., Sundqvist, J., Kcher, P., Mikolajick, T., Frey, L.
We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::78bbf6f1d7788af33c14c8a3173c91f1
https://publica.fraunhofer.de/handle/publica/226415
https://publica.fraunhofer.de/handle/publica/226415
Publikováno v:
Analytical Chemistry; 4/1/2011, Vol. 83 Issue 7, p2699-2704, 6p, 4 Graphs
