Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kazuyuki HIGASHI"'
Publikováno v:
Estuarine, Coastal and Shelf Science. 285:108299
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b706dbfa84686a6d0c32c49ea2df157
https://doi.org/10.1016/j.ecss.2023.108299
https://doi.org/10.1016/j.ecss.2023.108299
Publikováno v:
Journal of Environmental Chemistry. 30:115-118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aba8f3da3ef7f6f2174435e0d681d256
https://doi.org/10.5985/jec.30.115
https://doi.org/10.5985/jec.30.115
Autor:
Sosuke OTANI, Kenta UEMURA, Kunihiro TOKUDA, Kohei FUJISHIMA, Kazuyuki HIGASHI, Yasunori KOZUKI
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. B3 (Ocean Engineering). 78:I_847-I_852
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4029e453614ce79dcbde5e7ad02422f5
https://doi.org/10.2208/jscejoe.78.2_i_847
https://doi.org/10.2208/jscejoe.78.2_i_847
Publikováno v:
Japanese Journal of Benthology. 72:71-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ec57e1b89d7c1990f8cc94f77ce628
https://doi.org/10.5179/benthos.72.71
https://doi.org/10.5179/benthos.72.71
Autor:
Kengo Uchida, Kenro Nakamura, Toyohiro Chikyow, Kazuyuki Higashi, Kazumichi Tsumura, Takahiro Nagata, Jin Kawakita
Publikováno v:
3DIC
The chemical bonding state of Mn film on SiO 2 , which is expected to be applied as a bonding material for Si wafer, was investigated by x-ray photoelectron spectroscopy (XPS). The as deposited Mn film had unintentionally oxidized surface and interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9eb9649101a9c941c4527ece4437111
https://doi.org/10.1109/3dic48104.2019.9058775
https://doi.org/10.1109/3dic48104.2019.9058775
Autor:
Kengo Uchida, Takahiro Nagata, Kazumichi Tsumura, Akihiro Kojima, Kenro Nakamura, Hideki Shibata, Kazuyuki Higashi
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
We investigated the effects of N 2 plasma treatment on Mn-Mn bonding strength and the electrical properties of a Mn layer between SiO 2 layers. Si atoms introduced into the Mn layer by N 2 plasma play an important role in improving bonding strength.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::282b5f955d353ab79675118629aa6bc5
https://doi.org/10.23919/ltb-3d.2019.8735349
https://doi.org/10.23919/ltb-3d.2019.8735349
Publikováno v:
Journal of Water and Environment Technology. 14:447-454
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0595b8a97a23dc84dcea229e0d99f1
https://doi.org/10.2965/jwet.16-022
https://doi.org/10.2965/jwet.16-022
Publikováno v:
SEKE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c560e01ec25dc7f69bb955e314db036f
https://doi.org/10.18293/seke2018-047
https://doi.org/10.18293/seke2018-047
Autor:
Kengo Uchida, Hideki Shibata, Kazuyuki Higashi, Kazumichi Tsumura, Yoshiaki Sugizaki, Kenro Nakamura
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
We propose a new Cu/SiO hybrid bonding process using ultrathin Mn film at the bonding interface. In this process, bonding stability is improved because the bonding interface consists of only Mn. In addition, Mn on SiO forms a MnSiO, which is known as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655534bdf5bcdbd7c35e2817fad36f17
https://doi.org/10.1109/iitc.2018.8457124
https://doi.org/10.1109/iitc.2018.8457124
Autor:
Kazuyuki Higashi
Publikováno v:
SSRN Electronic Journal.
I investigate the fragmentation under high frequency trading (HFT) popularity. I make a toy model of security exchange market competition. With the friction like the Bertrand competition with differentiated goods, the effect of the number of venues o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68f50368b5d75354e4e793ab4729cb6d
https://doi.org/10.2139/ssrn.3220124
https://doi.org/10.2139/ssrn.3220124