Výsledky vyhledávání - "Kazuyoshi Torii"

Oxide TFT Rectifier Achieving 13.56-MHz Wireless Operation

Autor: Hiroaki Ozaki, Takanori Yamazoe, Tetsufumi Kawamura, Hiroyuki Uchiyama, Kazuyoshi Torii, Kikuo Watanabe, Hironori Wakana, Kuniharu Fujii

Publikováno v: IEEE Transactions on Electron Devices. 59:3002-3008

We have fabricated a full-wave rectifier using fully depleted amorphous In-Ga-Zn-O thin-film transistors (TFTs). The rectifier is composed of four TFTs, and it rectified 13.56-MHz wireless input from a 200-mW commercial RFID reader/writer. We also ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8029c58b38ceef4dc4ff34918d379ba9
https://doi.org/10.1109/ted.2012.2213091

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Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor

Autor: Kazuyoshi Torii, Nobuyuki Mise, Arito Ogawa, Tatsuyuki Saito, Hideharu Itatani, Yuji Takebayashi, M. Sakai, Tomoko Sekiguchi, Osamu Tonomura, Hirohisa Yamazaki, Sadayoshi Horii

Publikováno v: IEEE Transactions on Electron Devices. 57:2080-2086

To screen candidate materials for dynamic random-access memory capacitors, the tunneling probability at a constant equivalent oxide thickness (EOT) of metal-insulator-metal (MIM) capacitors was theoretically maximized according to a tradeoff between

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b21758d34f06ba226f48c707a4de726
https://doi.org/10.1109/ted.2010.2052715

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Enhancement of Drain Current in Planar MOSFETs by Dopant Profile Engineering Using Nonmelt Laser Spike Annealing

Autor: Toshiyuki Mine, Atsushi Hiraiwa, Akio Shima, Kazuyoshi Torii

Publikováno v: IEEE Transactions on Electron Devices. 54:2953-2959

We investigated the effect of dopant profile engineering in planar MOSFETs, in which activation annealing was done using only nonmelt laser spike annealing (LSA). Device performance was 10% and 20% better compared to that when conventional LSA and ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ae09299cf9fcdeb16a139a027520bfb
https://doi.org/10.1109/ted.2007.906972

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Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films

Autor: Kazuyoshi Torii, Takeshi Ishida, Yasuhiro Shimamoto, Koji Fujisaki, Toshiyuki Mine, Renichi Yamada

Publikováno v: Japanese Journal of Applied Physics. 46:3206-3210

Charge localization causes initial retention loss and memory window narrowing after write/erase cycling in a nonvolatile memory device using a metal–oxide–nitride–oxide–semiconductor (MONOS) structure. To overcome these problems, we propose t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e5fdbf9e18cb234ea9d2ff5f9bec7ef
https://doi.org/10.1143/jjap.46.3206

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Self-Aligned Fabrication Process of Electrode for Organic Thin-Film Transistors on Flexible Substrate Using Photosensitive Self-Assembled Monolayers

Autor: Masahiko Ando, Kazuyoshi Torii, Tadashi Arai, Masaaki Fujimori, Naoya Sato, Kawasaki Masahiro, Kazuo Yamaguchi, Takeo Shiba

Publikováno v: Japanese Journal of Applied Physics. 46:2700-2703

A new long-wavelength-photosensitive self-assembled-monolayer (SAM) was developed, and a process fabricating alignment-free printable electrodes for flexible organic thin-film transistors (OTFTs) with the SAM was proposed. The SAM was degraded and it

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45a39cd5f9712f2d4a7592c1e3bf34aa
https://doi.org/10.1143/jjap.46.2700

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Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions

Autor: Toshiyuki Mine, Kazuyoshi Torii, Akio Shima

Publikováno v: Japanese Journal of Applied Physics. 46:1841-1847

One of the major challenges in advanced complementary metal oxide semiconductor (CMOS) technology is to achieve an adequate dopant activation at the polycrystalline silicon (poly-Si) gate/gate oxide interface to minimize the poly-Si depletion effect.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::274fd8cbe14a4b877c00a4454d918608
https://doi.org/10.1143/jjap.46.1841

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Physics of Metal/High-k Interfaces

Autor: T. Nakaoka, Kenji Shiraishi, Yasushi Akasaka, Akio Ohta, Seiichi Miyazaki, Yasuo Nara, Kenji Ohmori, Naoto Umezawa, Keisaku Yamada, Parhat Ahmet, Toyohiro Chikyow, Kazuyoshi Torii, H. Iwai, Takashi Nakayama, Heiji Watanabe

Publikováno v: ECS Transactions. 3:129-140

The conventional theory of work functions (Schottky barriers) does not work at pure-metal/high-k-dielectrics interfaces. This occurs due to the selective interface atom bonding reflecting the large ionicity of high-k materials and the characteristic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28baa0aabeac68786f6112b845361302
https://doi.org/10.1149/1.2355705

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Electro-Luminescence from Ultra-Thin Silicon

Autor: Hirotaka Hamamura, Ryuta Tsuchiya, Shinichiro Kimura, Digh Hisamoto, Shinichi Saito, Kazuyoshi Torii, Haruka Shimizu, Toshiyuki Mine, Tadashi Arai, Takahiro Onai, Yuichi Matsui, Nobuyuki Sugii

Publikováno v: Japanese Journal of Applied Physics. 45:L679-L682

Ultra-thin single crystal silicon with the (100) surface formed by the local-oxidation-of-silicon (LOCOS) on a silicon-on-insulator (SOI) substrate becomes a quasi-direct band-gap semiconductor due to the quantum mechanical confinement effect. The de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a07acc6090113991592e74ddb01f3f6f
https://doi.org/10.1143/jjap.45.l679

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