Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Kazuyoshi Nakada"'
Publikováno v:
Energies, Vol 15, Iss 1, p 4 (2021)
Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we con
Externí odkaz:
https://doaj.org/article/8acec0dc758e4e5ea1ade39d5467ad7e
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:971-976
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51c50737535302eacf1e17febb486466
https://doi.org/10.1002/pip.3298
https://doi.org/10.1002/pip.3298
Publikováno v:
IEEE Journal of Photovoltaics. 10(No. 4):927-934
Radio frequency facing target sputtering (RF-FTS) has a potential to deposit high-quality intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layers for silicon heterojunction (SHJ) solar cells without using hazardous gases. We investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a816f5bc9cb75ea17196a86d7930cb5f
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100826297
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100826297
Publikováno v:
Energies; Volume 15; Issue 1; Pages: 4
Energies, Vol 15, Iss 4, p 4 (2022)
Energies, Vol 15, Iss 4, p 4 (2022)
Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::671a47c7ccd7b88a33afae5d4c00a7ac
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Despite its potential in the single-junction solar cell application, extensive research into the wide bandgap CuIn 1−x Ga x S 2 (CIGS 2 ) solar cell material has yet to be done to date. In this work, we aimed to clarify the role and design rule of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39760b1525a9ff4c200a5110648e5482
https://doi.org/10.1109/pvsc43889.2021.9518510
https://doi.org/10.1109/pvsc43889.2021.9518510
Publikováno v:
ACS Applied Energy Materials. 2:5103-5108
The carrier recombination at a heterointerface between an n-type CdS buffer and a p-type Cu(In, Ga)Se2 (CIGS) absorber in CIGS solar cells can be suppressed by introducing a Cu-deficient layer (CDL...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::900888f876bb4331b0ebcdb4630ba2f1
https://doi.org/10.1021/acsaem.9b00774
https://doi.org/10.1021/acsaem.9b00774
Control of Donor Concentration in n -Type Buffer Layer for High-Efficiency Cu(In,Ga)Se 2 Solar Cells
Autor:
Takahito Nishimura, Takahiro Hayakawa, Akira Yamada, Hiroki Sugiura, Kazuyoshi Nakada, Naoki Suyama
Publikováno v:
IEEE Journal of Photovoltaics. 8:1841-1846
To improve the conversion efficiency of Cu(In,Ga)Se2 (CIGS) solar cells, we clarified the correlation between the recombination at CdS/CIGS interface and donor concentration in a CdS buffer layer, and propose a technique to control the donor concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9e23042d9477727ff178a36529db57
https://doi.org/10.1109/jphotov.2018.2865170
https://doi.org/10.1109/jphotov.2018.2865170
Publikováno v:
Progress in Photovoltaics: Research and Applications. 27:171-178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::def58fe06b5beec7f462fbc59e138b1d
https://doi.org/10.1002/pip.3077
https://doi.org/10.1002/pip.3077
Publikováno v:
Solar Energy Materials and Solar Cells. 184:67-72
In this work, we found that the deposition of a Cu-deficient layer after alkali post-deposition treatment (PDT) of Cu(In,Ga)Se2 (CIGS) at low temperature (450 °C) effectively improves the performance of CIGS solar cells. Compared to the CGIS with on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c157af10bf27e4a8411dadbfbbbe4d4
https://doi.org/10.1016/j.solmat.2018.04.030
https://doi.org/10.1016/j.solmat.2018.04.030
Publikováno v:
Progress in Photovoltaics: Research and Applications. 26:291-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd418b7b4d2544ff0c6deb5d4eb62e3
https://doi.org/10.1002/pip.2972
https://doi.org/10.1002/pip.2972