Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Kazuyoshi Iida"'
Autor:
Kazuma Ito, Weifang Lu, Motoaki Iwaya, Yoshiya Miyamoto, Kazuyoshi Iida, Koji Okuno, Naoki Sone, Renji Okuda, Isamu Akasaki, Tetsuya Takeuchi, Koichi Mizutani, Satoshi Kamiyama, Masaki Ohya
Publikováno v:
ACS applied materialsinterfaces. 13(31)
Here, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple quantum shell (MQS)/nanowire core-shell structures on a patterned n-GaN/sapph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e6900f9d6f76048aa2ccd7729e13de7
https://pubmed.ncbi.nlm.nih.gov/34313418
https://pubmed.ncbi.nlm.nih.gov/34313418
Autor:
Hedeki Murakami, Nanami Goto, Tetsuya Tekeuchi, Motoaki Iwaya, Mizuki Terazawa, Kazuyoshi Iida, Satoshi Kamiyama, Naoki Sone, Isamu Akasaki, Weifang Lu, Dong-Pyo Han
Publikováno v:
Nanophotonics, Vol 9, Iss 1, Pp 101-111 (2019)
The superior crystalline quality of coaxial GaInN/GaN multiple-quantum shell (MQS) nanowires (NWs) was demonstrated by employing an AlGaN undershell during metal-organic chemical vapor deposition. Scanning transmission electron microscopy (STEM) resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2af0b87f61ebc35dd934a1dcba2f3665
https://doi.org/10.1515/nanoph-2019-0328
https://doi.org/10.1515/nanoph-2019-0328
Autor:
Tetsuya Tekeuchi, Kazuyoshi Iida, Isamu Akasaki, Satoshi Kamiyama, Motoaki Iwaya, Nanami Goto, Atsushi Suzuki, Weifang Lu, Dong-Pyo Han, Naoki Sone
Publikováno v:
Nanoscale. 11:18746-18757
Coaxial GaInN/GaN multiple-quantum-shells (MQSs) nanowires (NWs) were grown on an n-type GaN/sapphire template employing selective growth by metal-organic chemical vapour deposition (MOCVD). To improve the cathodoluminescence (CL) emission intensity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d32c6341a3048fa00950926b7b66331
https://doi.org/10.1039/c9nr07271c
https://doi.org/10.1039/c9nr07271c
Autor:
Naoki Sone, Isamu Akasaki, Masaki Ohya, Koichi Mizutani, Tetsuya Takeuchi, Satoshi Kamiyama, Koji Okuno, Weifang Lu, Yoshiya Miyamoto, Motoaki Iwaya, Renji Okuda, Kazuyoshi Iida, Kazuma Ito
Publikováno v:
Gallium Nitride Materials and Devices XVI.
GaInN/GaN multiple quantum shells (MQS) nanowires and p-GaN shells were embedded with n-GaN layers through tunnel junction (TJ) shells using metalorganic chemical vapor deposition (MOCVD) method. The MQS nanowires were selectively grown on n-GaN/sapp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e22282af9a75256a86d389e8d71d8e
https://doi.org/10.1117/12.2578128
https://doi.org/10.1117/12.2578128
Autor:
Naoki Sone, Satoshi Kamiyama, Weifang Lu, Yoshiya Miyamoto, Tetsuya Takeuchi, Renji Okuda, Koichi Mizutani, Isamu Akasaki, Koji Okuno, Kazuyoshi Iida, Kazuma Ito, Masaki Ohya, Motoaki Iwaya
Publikováno v:
Gallium Nitride Materials and Devices XVI.
A tunnel junction and a n-GaN cap layer grown on the multi-quantum shells (MQS) /nanowires are introduced to decrease the resistivity and optical loss. The selective-area growth of the MQS/nanowire core-shell structures on the template was performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3d3ba4c765db27bd888d2ceaf6af12
https://doi.org/10.1117/12.2578133
https://doi.org/10.1117/12.2578133
Autor:
Daisuke Nakamura, Kazuyoshi Iida, Kayo Horibuchi, Yuko Aoki, Naoko Takahashi, Yuto Mori, Miki Moriyama, Shugo Nitta, Hiroshi Amano
Publikováno v:
Applied Physics Express. 15:045501
The working mechanism of the anti-parasitic-reaction (APR) catalyst of tungsten carbide (WC) coating on graphite in hydride vapor phase epitaxy GaN growth were examined. During NH3 annealing, the surface of WC is reduced as well as nitrided. The W2N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6017b400d8d06205a4066dca90186f36
https://doi.org/10.35848/1882-0786/ac5ba4
https://doi.org/10.35848/1882-0786/ac5ba4
Autor:
Koji Okuno, Koichi Mizutani, Kazuyoshi Iida, Masaki Ohya, Naoki Sone, Weifang Lu, Renji Okuda, Yoshiya Miyamoto, Kazuma Ito, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
Publikováno v:
physica status solidi (b). 259:2100221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a6e415ac7d5422c25f3b9193d4daed
https://doi.org/10.1002/pssb.202100221
https://doi.org/10.1002/pssb.202100221
Autor:
Weifang Lu, Koichi Mizutani, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Yoshiya Miyamoto, Renji Okuda, Koji Okuno, Kazuyoshi Iida, Isamu Akasaki, Naoki Sone, Kazuma Ito, Masaki Ohya
Publikováno v:
Journal of Crystal Growth. 578:126423
In this study, the growth mechanisms of n-type gallium nitride (GaN) cap layers for embedding nanowire-based multi-quantum-shell (NW-MQS) with a tunnel junction were investigated using the metal–organic vapor-phase epitaxy method. Herein, instead o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e6565d1e3156c8e19bb9eef9f5a44e
https://doi.org/10.1016/j.jcrysgro.2021.126423
https://doi.org/10.1016/j.jcrysgro.2021.126423
Autor:
Isamu Akasaki, Koichi Mizutani, Satoshi Kamiyama, Kazuma Ito, Yoshiya Miyamoto, Kazuyoshi Iida, Koji Okuno, Weifang Lu, Naoki Sone, Motoaki Iwaya, Masaki Ohya, Tetsuya Takeuchi, Renji Okuda, Dong-Pyo Han
Publikováno v:
Journal of Crystal Growth. 570:126201
In this study, we discuss the influence of SiH4 flow rates on the structural and optical properties of GaN nanowires (NWs) with multiple-quantum-shells (MQSs). To this end, we prepared two n-GaN core NW samples with different SiH4 flow rates. Subsequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b252e9eace52fe262092c6765eee957b
https://doi.org/10.1016/j.jcrysgro.2021.126201
https://doi.org/10.1016/j.jcrysgro.2021.126201
Autor:
Motoaki Iwaya, Koji Okuno, Koichi Mizutani, Satoshi Kamiyama, Yoshiya Miyamoto, Renji Okuda, Isamu Akasaki, Kazuyoshi Iida, Tetsuya Takeuchi, Weifang Lu, Naoki Sone, Kazuma Ito, Masaki Ohya
Publikováno v:
Applied Physics Express. 14:074004
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b30ff3547ad818a925ead8c12009a87
https://doi.org/10.35848/1882-0786/ac0c65
https://doi.org/10.35848/1882-0786/ac0c65