Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kazuya Ueno"'
Publikováno v:
Journal of Crystal Growth. 468:696-700
Rare earth element, Ce, doped Ge (Ge:Ce) three-dimensional crystal is fabricated on Si (001) via a solid source low-temperature molecular beam epitaxy. Ce affects the formation of the self-assembled Ge dot, including its structure, initial growth and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb6deb0227541055479da20df76967d1
https://doi.org/10.1016/j.jcrysgro.2016.11.055
https://doi.org/10.1016/j.jcrysgro.2016.11.055
Autor:
Takuya Matsumoto, Kouichiro Adachi, Yasuhito Gotoh, Nobutoshi Arai, Hiroshi Tsuji, Junzo Ishikawa, Hiroshi Kotaki, Naoyuki Gotoh, Kazuya Ueno
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:125-128
Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanopartic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8804d707beb6e9010533d36f8893448
https://doi.org/10.1016/j.nimb.2005.08.103
https://doi.org/10.1016/j.nimb.2005.08.103
Autor:
Kazuya Ueno, Junzo Ishikawa, Nobutoshi Arai, Takuya Matsumoto, Kouichiro Adachi, Hiroshi Tsuji, Yasuhito Gotoh, Hiroshi Kotaki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:422-427
Two formation methods of delta-layered metal nanoparticles in thermally grown thin SiO 2 layer on Si substrate were investigated: (1) gold negative-ion implantation at low-energy for nanoparticle formation at a shallow depth of the oxide layer and (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::982fe05cfb1a85e5ae35eabe8293daac
https://doi.org/10.1016/j.nimb.2005.05.028
https://doi.org/10.1016/j.nimb.2005.05.028
Autor:
Kouichiro Adachi, Junzo Ishikawa, Hiroshi Kotaki, Yasuhito Gotoh, Hiroshi Tsuji, Takuya Matsumoto, Nobutoshi Arai, Kazuya Ueno
Publikováno v:
Surface and Coatings Technology. 196:44-49
Metal nanoparticles in application for silicon based single electron devices are formed in a thin SiO 2 layer such as gate oxide layer on silicon substrate. The TEM observation is reliable but takes much effort and a long time for obtaining informati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e78e7c2848e4abf88590d578f977e43d
https://doi.org/10.1016/j.surfcoat.2004.08.090
https://doi.org/10.1016/j.surfcoat.2004.08.090
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 23:452-459
This study deals with nondestructive evaluation of the solder ball joints in BGA package. In order to establish the fast, two-dimensional, non-contact and non-destructive method for the evaluation of solder joints, a new technique based on the infrar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da8ea1100a310075dade837ed0df8f63
https://doi.org/10.2207/qjjws.23.452
https://doi.org/10.2207/qjjws.23.452
Autor:
Kazuya Ueno, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa, Takuya Matsumoto, Kouichiro Adachi, Hiroshi Kotaki, Nobutoshi Arai
Publikováno v:
SURFACE & COATINGS TECHNOLOGY. 196(1-3):39-43
Two formation methods of nanoparticles distributed at a certain depth in a delta layer by negative ion implantation were investigated. Such delta layer formation of isolated metal nanoparticles is desired in a very thin gate oxide film, with thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b6a8dba3f9d2db5e362e2b732257357
http://hdl.handle.net/2433/7948
http://hdl.handle.net/2433/7948
Autor:
Kouichiro Adachi, Takuya Matsumoto, Kazuya Ueno, Hiroshi Tsuji, Yasuhito Gotoh, Nobutoshi Arai, Junzo Ishikawa, Hiroshi Kotaki
Publikováno v:
APPLIED SURFACE SCIENCE. 238(1-4):132-137
Formation of silver nanoparticles formed by silver negative-ion implantation in a thin SiO 2 layer and its I – V characteristics were investigated for development single electron devices. In order to obtain effective Coulomb blockade phenomenon at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cbb8d6c27e8073569a26e33c0e8053f
http://hdl.handle.net/2433/7949
http://hdl.handle.net/2433/7949
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 21:546-552
In this study, a ultrasonic evaluation was performed on the bonded areas in the semiconductor devices. The capillary or bonding tool fixed with epoxy resin holder was used for the transmission of ultrasound from the probe to wire bonded area and for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190389d81607beca0a8977a74489f911
https://doi.org/10.2207/qjjws.21.546
https://doi.org/10.2207/qjjws.21.546
Autor:
Tetsuya Sumi, Yohei Kato, Hiroshi Takebayashi, Naomasa Nagatani, Yasuhiro Takemon, Kazuya Ueno, Shinichi Okazaki
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. B1 (Hydraulic Engineering). 73:I_1195-I_1200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4587946c9d783dd3e1ace83fd48857
https://doi.org/10.2208/jscejhe.73.i_1195
https://doi.org/10.2208/jscejhe.73.i_1195
Publikováno v:
The proceedings of the JSME annual meeting. :41-42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183f3593fcb07603798d8a8a154f00fa
https://doi.org/10.1299/jsmemecjo.2004.6.0_41
https://doi.org/10.1299/jsmemecjo.2004.6.0_41