Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kazutoshi Takiya"'
Autor:
Kazutoshi Takiya, Jun-ichi Shirakashi, Yusuke Tomoda, Shunsuke Ueno, Watari Kume, Takato Watanabe
Publikováno v:
Applied Surface Science. 258:2029-2033
We report a newly investigated approach for the control of the tunnel resistance of nanogaps using field-emission-induced electromigration (“activation”), in order to decrease the power consumption during the process. The method is demonstrated b
Autor:
Watari Kume, Jun-ichi Shirakashi, Michinobu Hanada, Yusuke Tomoda, Kazutoshi Takiya, Shunsuke Ueno
Publikováno v:
Applied Surface Science. 258:2153-2156
We report a simple and easy method for the integration of planar-type single-electron transistors (SETs). This method is based on electromigration induced by a field emission current, which is so-called “activation”. The integration of two SETs w
Autor:
Shunsuke, Ueno, Yusuke, Tomoda, Watari, Kume, Michinobu, Hanada, Kazutoshi, Takiya, Jun-ichi, Shirakashi
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:6258-6261
A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called
Autor:
Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi, Yusuke Tomoda, Kazutoshi Takiya
Publikováno v:
Journal of nanoscience and nanotechnology. 11(7)
A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" an
Autor:
Jun-ichi Shirakashi, Watari Kume, Shunsuke Ueno, Yusuke Tomoda, Michinobu Hanada, Kazutoshi Takiya
Publikováno v:
Journal of nanoscience and nanotechnology. 10(11)
We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called "activation" and is demonstrated using arrow-shaped Ni
Publikováno v:
Journal of Applied Physics. 109:07C919
Planar-type Ni/vacuum/Ni tunnel junctions based on ferromagnetic nanogaps were fabricated by field-emission-induced electromigration in an approach that we call “activation.” In the activation method, we were simply and easily able to control the