Zobrazeno 1 - 10
of 234
pro vyhledávání: '"Kazutoshi Kobayashi"'
Autor:
Yudai Kawakami, Makoto Sakai, Hiroaki Masuda, Masami Miyajima, Takao Kanzaki, Kazutoshi Kobayashi, Tatsuya Ohno, Hiroshi Sakurai
Publikováno v:
IEEE Open Journal of Engineering in Medicine and Biology, Vol 5, Pp 157-162 (2024)
Introduction: While carbon ion radiotherapy is highly effective in cancer treatment, it has a high risk of causing soft error, which leads to malfunctions in cardiac implantable electrical devices (CIEDs). To predict the risk of malfunction prior to
Externí odkaz:
https://doaj.org/article/500279b5c78d4ed99f96d474a9052019
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 357-366 (2023)
This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off. The proposed gate driver
Externí odkaz:
https://doaj.org/article/143f5b62f15b48e9b8a02f2864b1e411
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 817-824 (2019)
Soft-error tolerance depending on threshold voltage of transistors was evaluated by α -particle, heavy-ion, and neutron irradiation. Three chips were fabricated, one embeds low-threshold general-purpose (GP) transistors and the others embed high-thr
Externí odkaz:
https://doaj.org/article/0177516e56094a168845293418b9e733
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5ede74e45dc99ea1849a0b20584d83
https://doi.org/10.1109/irps48203.2023.10118123
https://doi.org/10.1109/irps48203.2023.10118123
Autor:
Kazutoshi Kobayashi, Tomoharu Kishita, Hiroki Nakano, Jun Furuta, Mitsuhiko Igarashi, Shigetaka Kumashiro, Michitarou Yabuuchi, Hironori Sakamoto
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb38ceca20ce896f964da353eda85d6
https://doi.org/10.1109/irps48203.2023.10117873
https://doi.org/10.1109/irps48203.2023.10117873
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3023309ccd71b72cc6700b579af63d3f
https://doi.org/10.1109/irps48203.2023.10117957
https://doi.org/10.1109/irps48203.2023.10117957
Publikováno v:
IEEE Journal of Solid-State Circuits. :1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa0e4a07ab909dd2df2814d84d1ab25
https://doi.org/10.1109/jssc.2022.3229828
https://doi.org/10.1109/jssc.2022.3229828
Publikováno v:
IEICE Transactions on Electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f29a4032150a8f50ccda7f8575492f7
https://doi.org/10.1587/transele.2022ctp0001
https://doi.org/10.1587/transele.2022ctp0001
Publikováno v:
Journal of Electronic Testing. 37:675-684
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0348f750330d37403491696d470d60eb
https://doi.org/10.1007/s10836-021-05972-y
https://doi.org/10.1007/s10836-021-05972-y
Autor:
Yuuki Uchida, Yasumasa Tsukamoto, Koji Shibutani, Kazutoshi Kobayashi, Yoshio Takazawa, Mitsuhiko Igarashi, Makoto Yabuuchi
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :1536-1545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e79a94c7315a6c5d0cb4819c11ac77
https://doi.org/10.1587/transfun.2020kep0017
https://doi.org/10.1587/transfun.2020kep0017