Výsledky vyhledávání - "Kazutaka Inoue"

Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

Autor: Daisuke Sato, Kenta Sugawara, Masaya Okada, Seiji Samukawa, Takahiro Sawada, Ken Nakata, Kazutaka Inoue, Daisuke Ohori

Publikováno v: Journal of Vacuum Science & Technology A. 39:042601

We investigated higher selective etching between SiN and GaN using an HBr neutral beam (NB) and found that it exhibited a more selective reaction compared to Cl2 NB. The etching rate of GaN mainly depended on the desorption rate of the etching produc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::064e88ec1b0b8aaa0815417dc3cfab5e
https://doi.org/10.1116/6.0000867

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Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications

Autor: Kenta Sugawara, Hiroshi Yamamoto, Ken Kikuchi, Kazutaka Inoue, Isao Makabe

Publikováno v: BCICTS

This paper describes the high breakdown voltage InAlN HEMT development and the possibility of InAlN HEMT to lower frequency range, including 5G sub-6 GHz band applications. The developed InAlN barrier HEMT with GaN cap layer was successfully suppress

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfe24e190b18f619e2991e2c30de8c4b
https://doi.org/10.1109/bcicts45179.2019.8972761

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InAlN-MIS-HEMTs with High Fmax on Si Substrates

Autor: Issei Watanabe, Ken Nakata, Akifumi Kasamatsu, Y. Yamashita, Isao Makabe, Tomohiro Yoshida, Kazutaka Inoue

Publikováno v: 2019 Compound Semiconductor Week (CSW).

InAlN-MIS-High Electron Mobility Transistors (HEMTs) with 90 nm gate length were fabricated on a Si substrate. The devices, with pad electrodes, exhibited on-resistance of $1.38\ \Omega \mathrm{mm}$ , contact resistance of $0.35\ \Omega \mathrm{mm}$

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1868122c7704aa3df8159701b86918c
https://doi.org/10.1109/iciprm.2019.8819348

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GaN HEMT Model with Enhanced Accuracy under Back-off Operation

Autor: Norihiko Ui, Ken Kikuchi, Gianni Bosi, Giorgio Vannini, Valeria Vadala, Antonio Raffo, Hiroshi Yamamoto, Kazutaka Inoue

In this paper, a modification of the Angelov DC I/V model is proposed with the aim of improving its accuracy in the back-off condition under Class-B operation yet preserving its excellent prediction capabilities under high output power and saturated

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01b9805a40f284ee9048a6ef03adc556
http://hdl.handle.net/10281/343330

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Atomic-layer etching of GaN by using an HBr neutral beam

Autor: Takahiro Sawada, Masaya Okada, Daisuke Ohori, Seiji Samukawa, Kazutaka Inoue, Ken Nakata, Daisuke Sato, Kenta Sugawara, Hideyuki Kurihara

Publikováno v: Journal of Vacuum Science & Technology A. 38:032603

In the gate-recess formation process, normally-off operation is achieved by removing the barrier layer by dry etching to reduce the two-dimensional-electron-gas concentration under the gate electrode. An atomic-layer defect-free etching of GaN is thu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2daeb42733519cdce28cca48e5aa217
https://doi.org/10.1116/6.0000126

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Measuring Study Activity across High School Students Using Commercial EOG Glasses

Autor: Kazutaka Inoue, Takashi Ohnishi, Yuji Uema

Publikováno v: UbiComp/ISWC Adjunct

Health monitoring using a wearable device is gaining increasing research interest. Several longitudinal studies have been conducted across college students taking advantage of the robust data acquisition of wearable devices. In these studies, watch-t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f758d1edd7e7c9d6c6351174538d1951
https://doi.org/10.1145/3267305.3267670

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Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements

Autor: Gianni Bosi, Giorgio Vannini, Antonio Raffo, Kazutaka Inoue, Norihiko Ui, Hiroshi Yamamoto, Valeria Vadala, Ken Kikuchi

In this paper, we discuss the comparison of two GaN HEMT technology processes by means of large-signal low-frequency (LF) measurements. LF load line analysis clarified the increase of output power and drain efficiency resulting from significant impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e920fb8f32f5c7e5161622040e51915
http://hdl.handle.net/10281/343350

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Toward large scale study using smart eyewear

Autor: Yuji Uema, Kazutaka Inoue

Publikováno v: UbiComp/ISWC Adjunct

The tracking of cognitive and physical activity using a wearable device is an emerging research field. While several studies have been performed on large-scale activity tracking using a watch-type wearable device, large-scale activity tracking using

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a45935481cc7a2b07c4f66d14cb9d19
https://doi.org/10.1145/3123024.3129272

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JINS MEME algorithm for estimation and tracking of concentration of users

Autor: Kazutaka Inoue, Yuji Uema

Publikováno v: UbiComp/ISWC Adjunct

Activity tracking using a wearable device is an emerging research field. Large-scale studies on activity tracking performed with eyewear-type wearable devices remains a challenging area owing to the negative effect such devices have on users' looks.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::410b8a68ff62c12bf04ea01853c21ab9
https://doi.org/10.1145/3123024.3123189

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