Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Kazushige Horio"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:6028-6034
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ab8a93c446ed0f7568624467f56ba9
https://doi.org/10.1109/ted.2022.3208853
https://doi.org/10.1109/ted.2022.3208853
Publikováno v:
IEEE Transactions on Electron Devices. 68:1550-1556
A 2-D analysis of OFF-state breakdown characteristics of AlGaN/GaN HEMTs with a high- ${k}$ passivation layer is performed as a function of gate-to-drain distance ${L} _{\text {GD}}$ . The relative permittivity of the passivation layer $\varepsilon _
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea40aa8df52c3adf81a5f9df04e8101
https://doi.org/10.1109/ted.2021.3060353
https://doi.org/10.1109/ted.2021.3060353
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:298-303
2-D analysis of off-state drain current–drain voltage characteristics in AlGaN/GaN HEMTs is performed; where three cases with single passivation layers (SiN or high- ${k}$ dielectric) and double passivation layers (first layer: SiN, second layer: h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2237d0ba368b1b296c9b40fcbefed69b
https://doi.org/10.1109/tdmr.2019.2903213
https://doi.org/10.1109/tdmr.2019.2903213
Publikováno v:
IEEE Transactions on Electron Devices. 65:3848-3854
We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high- ${k}$ passivation layer, and the results are compared with those having a normal SiN passivation layer. As a result, it is found that the breakdown voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd6316f1d4a45d8eed4539a46eec38d
https://doi.org/10.1109/ted.2018.2857774
https://doi.org/10.1109/ted.2018.2857774
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:46-53
We make a 2-D transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where only a deep acceptor above the midgap is considered. The deep-acceptor density is varied between 1017 cm−3and $8 {\times 10}^{{17}}$ cm−3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e3241efbb558bb8086c1a1ca42d1dd7
https://doi.org/10.1109/tdmr.2017.2779429
https://doi.org/10.1109/tdmr.2017.2779429
Publikováno v:
Microelectronics Reliability. 121:114153
A two-dimensional analysis of the off-state breakdown characteristics in field-plate AlGaN/GaN HEMTs is performed. The gate-to-drain distance is 1.5 μm, and the parameters are the SiN passivation-layer thickness d and the field-plate length LFP. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c4f71608d98b2e3f89021171d96492
https://doi.org/10.1016/j.microrel.2021.114153
https://doi.org/10.1016/j.microrel.2021.114153
Publikováno v:
Microelectronics Reliability. 73:36-41
We make a two-dimensional transient analysis of field-plate AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped semi-insulating buffer layer, which is modeled that as deep levels, only a deep acceptor located above the midgap is incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c7d6588e040a726fb590bf1aea9b6a
https://doi.org/10.1016/j.microrel.2017.04.019
https://doi.org/10.1016/j.microrel.2017.04.019
Publikováno v:
physica status solidi c. 13:350-353
Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99950f82e66b44f2d0d4ddc537593770
https://doi.org/10.1002/pssc.201510155
https://doi.org/10.1002/pssc.201510155
Publikováno v:
physica status solidi c. 13:341-344
We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current colla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1def759d54c62ce2a2fb2d250b1af251
https://doi.org/10.1002/pssc.201510156
https://doi.org/10.1002/pssc.201510156
Publikováno v:
BCICTS
Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- $k$ dielectric) and double passivation layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31acfcc588e68a38c9369a45c5ec7c05
https://doi.org/10.1109/bcicts.2018.8551096
https://doi.org/10.1109/bcicts.2018.8551096