Výsledky vyhledávání - "Kazusei Tamai"

Polishing Technology for 3D Shapes / Various Materials

Publikováno v: Journal of the Japan Society for Precision Engineering. 84:235-238

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96e269e2abd7d606c4a984b2667875fb
https://doi.org/10.2493/jjspe.84.235

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Investigation of Slurry Flow Behavior in Chemical Mechanical Polishing of Hard to Process Material

Autor: Kazutoshi Hotta, Kazusei Tamai, Ken-ichi Ishikawa, Yuichi Tomiie, Michio Uneda, Hitoshi Morinaga

Publikováno v: Journal of the Japan Society for Precision Engineering. 83:756-761

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::549fe6a97d7a296167e018169ad7912e
https://doi.org/10.2493/jjspe.83.756

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Characterization of Large Particles in Fumed Silica Based CMP Slurry

Autor: W. Scott Rader, Timothy Holt, Kazusei Tamai

Publikováno v: MRS Proceedings. 1249

Large particles in fumed silica dispersions were characterized by sedimentation, light scattering techniques, Transmission Electron Microscopy (TEM), and lacunarity. Applying centrifugation to fumed silica dispersions generated differences in sedimen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cea252861e4b20a30757179d6077e0c
https://doi.org/10.1557/proc-1249-e04-08

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Topography Reduction During Barrier CMP Improved Due to Tantalum Oxidation

Autor: Paul Lefevre, Kazusei Tamai, Scott W. Rader, Kenji Sakai, Katsuyoshi Ina

Publikováno v: MRS Proceedings. 732

Barrier CMP can reduce the topography generated during Cu CMP. In case of selective barrier CMP slurry like 1:10:1, it is expected that the topography reduction could not exceed the Ta thickness. Some recent observations made at Fujimi show that the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf91cfaae1b67ff7580fcb771ea3553c
https://doi.org/10.1557/proc-732-i4.5

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Disappearance of Barrier Metal during Cu Chemical Mechanical Planarization Processing and Its Mechanism

Autor: Kazusei Tamai, Akihito Yasui, Hitoshi Morinaga, Tatsuhiko Hirano, Hiroshi Asano

Publikováno v: Japanese Journal of Applied Physics. 50:05EC08

The bald disappearance of barrier metal had been observed on the wafer after Cu chemical mechanical planarization (CMP) processing. It was speculated that this phenomenon occurs because the excessively oxidized Ta by electrochemical reaction with Cu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89d3b33dc2ff4b22850d481d7069bd25
https://doi.org/10.1143/jjap.50.05ec08

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Analysis of Chemical and Mechanical Factors in CMP Processes for Improving Material Removal Rate

Autor: Kazusei Tamai, Toshiro Doi, Hitoshi Morinaga, Osamu Ohnishi, Syuhei Kurokawa

Publikováno v: Journal of The Electrochemical Society. 158:H333

As the design rules for electric microdevices gets smaller, the requirement for the production process gets more severe. For example, the nanolevel defect free with a higher throughput performance is required for chemical mechanical polish (CMP). To

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be17381d908cb80675993872d60c0a04
https://doi.org/10.1149/1.3534801

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