Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kazuo Shimoyama"'
Publikováno v:
Dental Materials Journal. 27:273-277
To improve the mechanical properties and to reduce the water sorption amount of denture base resins, the polymerization characteristics of three novel fluoro-substituted monomers (MAF-TBN, MAF-MAE, MAF-TBN) and three styrene-type monomers (PTBS, PEES
Publikováno v:
Applied Surface Science. 216:307-311
The growths of BaTiO 3 films on interfacial SiO 2 were carried out with molecular beam epitaxy (MBE) in various oxygen partial pressures. In the BaTiO 3 growth on 2 nm-thick SiO 2 film at the oxygen partial pressure of less than 4.8×10 −5 Pa, conc
Publikováno v:
Journal of Applied Physics. 92:4625-4630
Thin films of BaTiO3 and SrTiO3 and their superlattice were grown on SrTiO3 substrates using oxygen from the substrates as an oxygen source. Epitaxial growths were carried out by coevaporations of the component metals under ultrahigh vacuum without i
Publikováno v:
Materials Science Forum. :587-590
Autor:
Yusuke Matsunaga, Nobuyuki Yasui, Masahiro Kiyohara, Kikuo Yamabe, Kazuo Shimoyama, Akira Uedono
Publikováno v:
Materials Science Forum. :201-203
Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
Autor:
Akira Uedono, Toshiyuki Ohdaira, Tomohisa Mikado, Masahiro Kiyohara, R. Suzuki, Kikuo Yamabe, Kazuo Shimoyama
Publikováno v:
Materials Science in Semiconductor Processing. 6:367-369
Vacancy-type defects in SrTiO3 were studied by means of positron annihilation. Thin CeO2 films were grown on SrTiO3 substrates by molecular-beam epitaxy without using an oxidant; oxygen was supplied by diffusion from the substrate. This process is re
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
This paper presents a new isolation technique for high breakdown voltage RB-IGBT, whose termination area is extremely small in comparison with conventional isolation technique with thermal diffusion. The p+ isolation layer for the reverse blocking ca
Publikováno v:
MRS Proceedings. 666
High-quality thin films of BaTiO3 and SrTiO3 on SrTiO3 substrate were obtained by shutting off the oxygen supply during growth. Epitaxial growths were carried out with molecular-beam epitaxy (MBE) under extremely low oxygen partial pressure (pO2 < 1
Publikováno v:
MRS Proceedings. 567
We directly observed self-control crystallization of epitaxial BaTiO3 films during alternate depositions of BaO and TiO2. When TiO2 (or BaO) was supplied excessively, surface crystallinity and smoothness degraded due to three-dimensional (3D) growth.
Publikováno v:
Journal of Applied Physics. 94:5193
Vacancy-type defects in the CeO2/SrTiO3 structure were studied by means of positron annihilation. Thin CeO2 films were grown on SrTiO3 substrates by molecular-beam epitaxy without using an oxidant; oxygen was supplied by diffusion from the substrate