Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kazuo Nishihagi"'
Autor:
Tooru Tanaka, Congyu Hu, Qixin Guo, Zhengwei Chen, Katsuhiko Saito, Kazuo Nishihagi, Xu Wang, Makoto Arita
Publikováno v:
Journal of Luminescence. 194:374-378
We have fabricated the europium (Eu) doped Ga 2 O 3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b3637149ee9715acb5696ab7c2ca589
https://doi.org/10.1016/j.jlumin.2017.10.054
https://doi.org/10.1016/j.jlumin.2017.10.054
Publikováno v:
Materials Research Bulletin. 94:170-173
We have investigated structural properties of Eu doped gallium oxide (Ga 2 O 3 ) films grown by pulsed laser deposition at different substrate temperature. X-ray rocking curve and Raman spectroscopy measurements prove that the films grown at the subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe10eb4a4df6fc6802b882116a4607b
https://doi.org/10.1016/j.materresbull.2017.05.051
https://doi.org/10.1016/j.materresbull.2017.05.051
Publikováno v:
Thin Solid Films. 639:123-126
Thulium (Tm) doped Ga 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) with changing Tm compositions in the targets. Energy dispersive spectroscopy results reveal that films with different Tm compositions can be tail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e1de7f933cf3d6e2b5b00f1e3ce454
https://doi.org/10.1016/j.tsf.2017.08.038
https://doi.org/10.1016/j.tsf.2017.08.038
Autor:
Ayako Shimazaki, Yoshihiro Mori, Mohammad B. Shabani, Norikuni Yabumoto, Kazuo Nishihagi, Harumi Shibata, Yohichi Gohshi, Hikari Takahara, Motoyuki Yamagami
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 90:72-82
Vapor phase treatment (VPT) was under investigation by the International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) to improve the detection limit of total reflection X-ray fluorescence spectroscopy (TXRF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f719d5875b09e8cc9fc04abbf45e8244
https://doi.org/10.1016/j.sab.2013.10.006
https://doi.org/10.1016/j.sab.2013.10.006
Autor:
Kazuo Nishihagi
Publikováno v:
Hyomen Kagaku. 18:29-36
Laboratory XAFS装置も改良が進み, 通常のXAFS測定ではSRと比肩できるデータが出てきている。Laboratory XAFS装置はフォトン数や分解能あるいは不純線の存在等の固有の問題点を抱えていた。フ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b453c7b0c96d02b56faa5362b1e410d
https://doi.org/10.1380/jsssj.18.29
https://doi.org/10.1380/jsssj.18.29
Autor:
Morita Naoki, Wakasa Masanobu, Tatsushi Wakisaka, Kazuo Taniguchi, Kazuo Nishihagi, Shinichi Terada
Publikováno v:
BUNSEKI KAGAKU. 45:933-939
有機物マトリックス中の微量元素の直接定量を目的として,単色化X線源を用いたエネルギー分散型蛍光X線分析装置(EDXRF)を開発した.EDXRFにおいて分光結晶で単色化したX線源(17.4keV)を用い
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5732421970ddb0cc0a50cf31a8c769
https://doi.org/10.2116/bunsekikagaku.45.933
https://doi.org/10.2116/bunsekikagaku.45.933
Autor:
Zhengwei Chen, Xu Wang, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Kazuo Nishihagi, Katsuhiko Saito, Makoto Arita
Publikováno v:
Applied Physics Letters. 109:102106
Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54da6f3a4f8b5cb1b5e8d809810286dc
https://doi.org/10.1063/1.4962538
https://doi.org/10.1063/1.4962538
Publikováno v:
Review of Scientific Instruments. 62:2588-2592
A two‐crystal spectrometer for chemical state analysis of high‐resolution x‐ray fluorescence spectra employs ball‐screw and slide mechanisms rather than gears to obtain a 2θ scanning range of 40°–147° and a Δ2θ scanning step of 10−4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca94a25ad1c7ff46daa5456dc4017bf9
https://doi.org/10.1063/1.1142235
https://doi.org/10.1063/1.1142235
Publikováno v:
Advances in X-ray Analysis. 35:393-399
A two-crystal spectrometer for chemical state analysis by high-resolution x-ray fluorescence spectrometry employs hall-screw and slide mechanisms rather than gears to obtain a 2θ scanning range of 40° -147°; a Δ2θ scanning step of 10−4 deg und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1c8d536bb26dd8f98a811c2eba5d3b
https://doi.org/10.1154/s037603080000906x
https://doi.org/10.1154/s037603080000906x
Publikováno v:
Advances in X-ray Analysis. 34:81-89
Recently, semiconductors have been integrated and densified to much higher levels. Under this circumstance, control of surface impurity on the Si substrate has become more important. We have attempted to increase analytical sensitivity of the transit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0765afc07fe4f7890bd745b2c28ffa
https://doi.org/10.1154/s037603080001435x
https://doi.org/10.1154/s037603080001435x