Zobrazeno 1 - 10
of 202
pro vyhledávání: '"Kazuo Morigaki"'
Publikováno v:
Philosophical Magazine Letters. 96:183-188
The decay of the peak intensity of the electron spin resonance signal associated with light-induced dangling bonds in a-Si(H) has been measured at room temperature as a function of time during very long intervals such as 3400 days after the intense p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994a499fed4c75a1f346aecf531eca47
https://doi.org/10.1080/09500839.2016.1184345
https://doi.org/10.1080/09500839.2016.1184345
Autor:
Kazuo Morigaki
Publikováno v:
The European Physical Journal Applied Physics. 90:20101
We have proposed a model of light-induced defect creation processes and light-induced defects. Recently, important results using pulsed electron-nuclear double resonance (ENDOR) by Fehr et al. [M. Fehr, A. Schnegg, C. Teutloff, R. Bittl, O. Astakhov,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8973d7c77224edd4f4b60daa4dd0545d
https://doi.org/10.1051/epjap/2020190257
https://doi.org/10.1051/epjap/2020190257
Publikováno v:
Canadian Journal of Physics. 92:561-564
Recombination rates at radiative defects in the hydrogenated amorphous silicon films prepared at various preparation conditions, estimated from intensities and characteristic lifetimes of defect photoluminescence, have been investigated. The temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c2d93e957644cbb27ab910a64462a4
https://doi.org/10.1139/cjp-2013-0538
https://doi.org/10.1139/cjp-2013-0538
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of reco
Autor:
Kazuo Morigaki, C. Ogihara
Publikováno v:
physica status solidi c. 9:2574-2577
Temperature variation of the recombination rates has been investigated for the electron-hole pairs responsible for defect PL in a defective a-Si:H film as grown. The results are compared with those obtained for a high-quality a-Si:H film after illumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ef7063f9559c42919108bbc465ef0a
https://doi.org/10.1002/pssc.201200199
https://doi.org/10.1002/pssc.201200199
Autor:
Kazuo Morigaki, H. Hikita
Publikováno v:
physica status solidi c. 8:2564-2568
Stretched exponential relaxation has been observed in various phenomena of hydrogenated amorphous silicon (a-Si:H) and hydrogenated polymorphous silicon (pm-Si:H). As an example, we take light-induced defect creation in a-Si:H and pm-Si:H, in which d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e9ba30f2fa988e54904b467c7dcfc5
https://doi.org/10.1002/pssc.201084107
https://doi.org/10.1002/pssc.201084107
Publikováno v:
physica status solidi c. 8:2792-2795
Temperature variation of radiative recombination rate obtained for defect photoluminescence (PL) in high-quality a-Si:H after illumination of intense pulsed light is presented and compared with results previously reported for defective a-Si:H films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31dacf84cb226ac9e63010819eea955e
https://doi.org/10.1002/pssc.201084056
https://doi.org/10.1002/pssc.201084056
Autor:
C. Ogihara, Kazuo Morigaki
Publikováno v:
physica status solidi c. 7:662-665
Temperature variations of radiative recombination rates of electron-hole pairs responsible for photoluminescence in a-Si:H films have been analysed from the intensity, I, and the characteristic value of the lifetime, τ, obtained from frequency resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99866ad8f2e8c70170621c8aac729cd2
https://doi.org/10.1002/pssc.200982710
https://doi.org/10.1002/pssc.200982710
Publikováno v:
Journal of Non-Crystalline Solids. 354:2131-2134
Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39ddb1bb49d9b2f1cea204434c6a5dfd
https://doi.org/10.1016/j.jnoncrysol.2007.09.060
https://doi.org/10.1016/j.jnoncrysol.2007.09.060