Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Kazuo Konuma"'
Publikováno v:
Journal of Applied Physics. 89:8141-8145
We investigated the influence of grinding as a pretreatment prior to the emitter film formation of single-walled carbon nanotubes (SWNTs) on the field emission and the geometric properties of SWNTs. Field emission from emitter films composed of groun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4999354cd68a60579b98de521e434cf
https://doi.org/10.1063/1.1372659
https://doi.org/10.1063/1.1372659
Autor:
Yoshitaka Asano, H. Azuma, T. Endo, H. Utsumi, Nobukazu Teranishi, K. Masubuchi, Shigeru Tohyama, Kazuo Konuma
Publikováno v:
IEEE Transactions on Electron Devices. 43:282-286
An infrared-bi-color image sensor was developed with a barrier height controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier height diode pixels are arranged vertically next to one another using a selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f311c26c989e54bb4d2ac96bed11a2f
https://doi.org/10.1109/16.481729
https://doi.org/10.1109/16.481729
Autor:
H. Utsumi, H. Azuma, Kazuo Konuma, Tsutomu Eundo, K. Masubuchi, Shigeru Tohyama, Yoshinori Asano, Nobukazu Teranishi
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 50:302-307
An infrared-bi-color image sensor was developed with a barrier-height-controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier-height diode pixels are arranged vertically next to one another using a selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b45ab03b7f7f07e10ecb8dd640fab8
https://doi.org/10.3169/itej1978.50.302
https://doi.org/10.3169/itej1978.50.302
Autor:
T. Ono, A. Tanabe, T. Seki, T. Muramatsu, H. Azuma, E. Takano, Kazuo Konuma, Nobukazu Teranishi, H. Goto, H. Sahara, S. Yamagata, Shigeru Tohyama, K. Masubuchi, M. Hijikawa, H. Utsumi
Publikováno v:
IEEE Transactions on Electron Devices. 42:1433-1440
A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f6f939a2cd9a5be990a318fe0e48f5
https://doi.org/10.1109/16.398651
https://doi.org/10.1109/16.398651
Autor:
Kazuo Konuma
Publikováno v:
The Journal of The Institute of Electrical Engineers of Japan. 121:375-377
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7000029cceae70170c8292e4ad1cae42
https://doi.org/10.1541/ieejjournal.121.375
https://doi.org/10.1541/ieejjournal.121.375
Autor:
Nobukazu Teranishi, K. Masubuchi, Kazuo Konuma, T. Saito, A. Tanabe, T. Muramatsu, Shigeru Tohyama
Publikováno v:
IEEE Transactions on Electron Devices. 39:1633-1637
Describes a 648*487 pixel PtSi Schottky-barrier infrared CCD image sensor. Due to the development of the modified inverted-LOCOS process, which can minimize dead regions, and the two-dopant concentration structure, which achieves both a large charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c81ac0764a4e8f189dc209d442bc5a3
https://doi.org/10.1109/16.141228
https://doi.org/10.1109/16.141228
Publikováno v:
IEEE Transactions on Electron Devices. 38:1136-1140
A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea4a411240b6b71948f0673d7077cba9
https://doi.org/10.1109/16.78390
https://doi.org/10.1109/16.78390
Publikováno v:
Journal of Applied Physics. 69:850-853
The barrier height inhomogeneity in PtSi/p‐Si and IrSi/p‐Si was observed by internal photoemission. New Fowler equations were introduced, to analyze the observed properties. Two regions with different barrier heights were assumed to coexist, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d233c7821e7691569f4a3d77abb0f297
https://doi.org/10.1063/1.347321
https://doi.org/10.1063/1.347321
Autor:
Y. Moriyama, Shigeru Tohyama, N. Takada, Kazuo Konuma, S. Yamagata, K. Masubuchi, T. Tanaka, N. Yoshioka, E. Oda, Nobukazu Teranishi
Publikováno v:
IEEE Transactions on Electron Devices. 37:629-635
A standard TV-compatible PtSi Schottky-barrier infrared imager is described. The imager is a 324*487 element area array and has an electronic shutter function. Although the pixel is 42*21 mu m, a large fill factor of 42% is obtained, using a 1.5- mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929457b82b24c4fe3d7bc5f0ae436f96
https://doi.org/10.1109/16.47766
https://doi.org/10.1109/16.47766
Autor:
T. Ono, M. Hijikawa, H. Utsumi, A. Tanabe, H. Goto, H. Azuma, T. Muramatsu, K. Masubuchi, Nobukazu Teranishi, E. Takano, Kazuo Konuma, T. Seki, H. Sahara, S. Yamagata, Shigeru Tohyama
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744b2d0f6ab0c1920fa534b793016633
https://doi.org/10.1109/iedm.1993.347370
https://doi.org/10.1109/iedm.1993.347370