Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Kazuo Kohmura"'
Autor:
Keiji Matsumoto, Takahito Watanabe, Risa Miyazawa, Toyohiro Aoki, Takashi Hisada, Yuzo Nakamura, Yasuhisa Kayaba, Jun Kamada, Kazuo Kohmura
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
International Symposium on Microelectronics. 2019:000280-000283
Heterogeneous integration of logic, memory, and sensor chips on interposers (2.5D) has attracted a lot of attention as a candidate for More-than-Moore technology. For the high performance 2.5D devices, high density integration of chips with narrow sp
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The bonding property of a thin adhesive for the high density 3D/2.5D Si chip integration with the Cu-Cu bonding at the low temperature range (150–400 °C) was investigated. The cured thin adhesive is bondable to SiO 2 after baking at 150 °C with t
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Progress of our new spin-on carbon (SOC) materials development for planarization use in multilayer resist process was described. We designed new SOC materials with different base polymer structure and carbon density, evaluated these planarization per
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
In this study, we have made a breathable frame (outer sizes: 151mm x 119mm, frame width: 4mm, and frame height: 1.3mm) which has the mounting space for filters and the ventilation path inside of the frame. The breathable frame is composed of stacked
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
In this report, we will describe the progress of our new SOC material development for the underlayer. In the advanced patterning technology such as EUV lithography, the etching resistance and the adhesive property with a middle layer will be key requ
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
As advancement of semiconductor to 1Xnm nodes and beyond, the importance of multilayer lithography process is increasing. Generally, multilayer consists of photoresist layer, middle layer and underlayer. Theses layer materials prefer spin-on type to
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
In this study, we fabricated a closed type EUV pellicle without any gaps by using the mask adhesive, forming the vent holes in the Si border part and putting the sufficiently wide area filters on the top side of Si border. Ventilation performance of
Publikováno v:
Photomask Technology.
In the existing DUV pellicle, haze generation risk on mask surface during DUV exposure exists due to the reaction of out gas in an exposure atmosphere. It is well known fact that outgas is generated not only from pellicle in itself but also by stray
Publikováno v:
ACS Applied Materials & Interfaces. 7:17131-17137
Organic nanolayers attract much attention for the isolation and adhesion promotion of the Cu line and insulator in Cu interconnection of microelectronic devices. This paper proposes a strategy for selective formation of adhesion nanolayer on the insu