Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Kazuo Kajiwara"'
Publikováno v:
Surface and Interface Analysis. 48:1132-1135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30a39879e80bd9630b95e137e86dc6d1
https://doi.org/10.1002/sia.6092
https://doi.org/10.1002/sia.6092
Publikováno v:
Surface and Interface Analysis. 48:1139-1143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b88ec00dcce05bf59aad3219ab9df4
https://doi.org/10.1002/sia.6091
https://doi.org/10.1002/sia.6091
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 14:23-27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::973be184b3d52a421e52057996717709
https://doi.org/10.1380/ejssnt.2016.23
https://doi.org/10.1380/ejssnt.2016.23
Autor:
Kazuo Kajiwara, Naoya Sakai, Koichi Hata, Kento Miyazaki, Hiroki Toyama, Tatsuo Iwata, Shigekazu Nagai
Publikováno v:
2016 29th International Vacuum Nanoelectronics Conference (IVNC).
In this study, we measured spin polarization of electrons field-emitted from a topological antiferromagnetic Cr(001) surface, which is expected to generate a high and stable spin-polarized electron beam. When the Cr thin film deposited on a W tip was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::413d9382f40b1acee114483f3052d684
https://doi.org/10.1109/ivnc.2016.7551475
https://doi.org/10.1109/ivnc.2016.7551475
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 9:371-374
We have been developing a next generation finely focused ion beam (FIB) system with noble gas field ion source (GFIS), which could reduce the contamination of irradiated ion species. Ion current stability of GFIS is one of the most fundamental factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86bc369ee751bb47be3fa3895760c3b
https://doi.org/10.1380/ejssnt.2011.371
https://doi.org/10.1380/ejssnt.2011.371
Publikováno v:
Surface and Interface Analysis. 42:1544-1547
For focused ion beam technology in the next generation, an adequate emitter shape for field gas ion source was investigated to obtain a higher angular current density, dl/dΩ. A -oriented tungsten emitter with a trimer-terminated nanostructure was fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6faf66c16d146a3d32e8207bcc6e475c
https://doi.org/10.1002/sia.3612
https://doi.org/10.1002/sia.3612
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 8:174-177
The emitter shape dependence of the ion current from a gas field ion source (GFIS) was examined using numerical simulations. The simulator is constructed by an electric field calculation program and the spread sheets which were developed by authors b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95021d7ab82a30d14b664899e509ac2
https://doi.org/10.1380/ejssnt.2010.174
https://doi.org/10.1380/ejssnt.2010.174
Publikováno v:
Zeitschrift für Kristallographie - Crystalline Materials. 224:5-8
We study ultrathin quasicrystalline (QC) films as catalysts for the synthesis of carbon nanotubes (CNTs). To optimize the conditions for the synthesis of CNTs with single chirality, it is important to understand the effects of the catalyst on the chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abbd9608b4236b0fd5834458e193efc3
https://doi.org/10.1524/zkri.2009.1069
https://doi.org/10.1524/zkri.2009.1069
Publikováno v:
Vacuum. 83:515-517
Plasma enhanced chemical vapor deposition (PECVD), which enables growth of vertically aligned carbon nanotubes (CNTs) directly onto a solid substrate, is considered to be a suitable method for preparing CNTs for nanoelectronics applications such as e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77eb8086f8756c305c6183a5222ed90
https://doi.org/10.1016/j.vacuum.2008.04.017
https://doi.org/10.1016/j.vacuum.2008.04.017
Publikováno v:
25th International Vacuum Nanoelectronics Conference.
A field-induced oxygen etching method (O 2 etching) is a suitable method for preparing a single atom terminated field emitter tip. By modifying the etching conditions, we demonstrated that a nano-protrusion could be fabricated on a tungsten field emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb24f374616ee4b3efbe84d68470dd7
https://doi.org/10.1109/ivnc.2012.6316952
https://doi.org/10.1109/ivnc.2012.6316952