Zobrazeno 1 - 10 of 318 pro vyhledávání: '"Kazuo Arai"'
1
Bone-Forming Effect of a Static Magnetic Field in Rabbit Femurs
Autor: Kazuo Arai, Yohei Jinno, Tetsuo Ichikawa, Shuntaro Yamada, Ryo Jimbo, Yoshihito Naito, Silvia Galli
Publikováno v: The International Journal of Periodontics & Restorative Dentistry. 39:259-264
This study investigated the level of magnetic energy around implants possessing a static magnetic field (SMF) and assessed the in vivo influence of SMF on bone regeneration. Implants possessing a sintered neodymium magnet internally were placed in a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6df37cf5173800108fd3b2bef6a68120
https://doi.org/10.11607/prd.3220
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2
Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography
Autor: Takuma Suzuki, Toshiyuki Ohno, Takashi Tsuji, Kazuo Arai, Bin Chen, Tetsuo Hatakeyama, Yoshiyuki Yonezawa, Hirohumi Matsuhata, Hirotaka Yamaguchi, Takashi Sekiguchi, Masayuki Sasaki
Publikováno v: Electrical Engineering in Japan. 197:3-17
SUMMARY Current 4H-SiC wafers contain certain amount of dislocations, stacking faults, and other lattice-defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of disl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::983e4b80efd3d73ea08de714578ec27a
https://doi.org/10.1002/eej.22871
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4
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Autor: Koji Yano, Akio Takatsuka, Kazuo Arai, Yasunori Tanaka, Tsutomu Yatsuo, Norio Matsumoto
Publikováno v: Materials Science Forum. :899-902
3 kV normally-off SiC-buried gate static induction transistors (SiC-BGSITs) were fabricated by using an innovative fabrication process that was used by us previously to fabricate 0.7–1.2 kV SiC-BGSITs. The fabricated device shows the lowest specifi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0266022b2231674fed3c9f82068ef0d
https://doi.org/10.4028/www.scientific.net/msf.778-780.899
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5
Akademický článek
Influences of postimplantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H–SiC.
Autor: Junji Senzaki, J., Kenji Fukuda, Kazuo Arai, J.
Publikováno v: Journal of Applied Physics; 9/1/2003, Vol. 94 Issue 5, p2942, 6p, 6 Graphs
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6
Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
Autor: Koji Yano, Tsutomu Yatsuo, Yasunori Tanaka, Akio Takatsuka, Kazuo Arai
Publikováno v: Materials Science Forum. :962-965
We investigated the short-circuit capabilities of 1.2 kV normally-off SiC buried gate static induction transistors (SiC-BGSITs). The maximum short-circuit energy was found to be 35.6 J/cm2, which is twice that of normally-on SiC-BGSITs and 3.3–5.6
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84f3d24a869bf39068106d1a453dc1b3
https://doi.org/10.4028/www.scientific.net/msf.740-742.962
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7
980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
Autor: Kazuo Arai, Tsutomu Yatsuo, Yasunori Tanaka, Akio Takatsuka, Koji Yano
Publikováno v: Materials Science Forum. :662-665
In this work, we succeeded in developing high performance normally-off SiC buried gate static induction transistors (SiC-BGSITs). To achieve the normally-off characteristics, design parameters around the channel region were optimized and process cond
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c03533bb73ace5d61e780c60d10f235d
https://doi.org/10.4028/www.scientific.net/msf.679-680.662
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8
Enlargement Growth of Large 4H-SiC Bulk Single Crystal
Autor: Tetsuya Ozawa, Hiroyoshi Taniguchi, Hajime Okumura, Ichiro Nagai, Tomohisa Kato, Hideaki Kawashima, Miura Tomonori, Kazuo Arai
Publikováno v: Materials Science Forum. :3-7
In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length growth technique (LLG). This method could achieve low thermal strain and rapid enlargement growth comparing wi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6323c2ba1f9912be0bbc0be6128c32fc
https://doi.org/10.4028/www.scientific.net/msf.679-680.3
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9
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
Autor: Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Yuuki Ishida, Sadafumi Yoshida
Publikováno v: Materials Science Forum. :543-546
In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the cl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::199f58113f7b0825fa08f9b1038d20e3
https://doi.org/10.4028/www.scientific.net/msf.645-648.543
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10
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Autor: Yasunori Tanaka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Akio Takatsuka
Publikováno v: Materials Science Forum. :535-538
We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission el
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5ccc4ece21fee54ee3a64b3142e6a46
https://doi.org/10.4028/www.scientific.net/msf.645-648.535
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