Zobrazeno 1 - 10 of 129 pro vyhledávání: '"Kazunori Shinoda"'
1
Akademický článek
Oxidation state of cobalt oxide in thermal-cyclic atomic layer etching of cobalt by plasma oxidation and organometallization
Autor: Sumiko Fujisaki, Yoshihide Yamaguchi, Hiroyuki Kobayashi, Kazunori Shinoda, Masaki Yamada, Kohei Kawamura, Masaru Izawa
Publikováno v: AIP Advances, Vol 14, Iss 4, Pp 045321-045321-9 (2024)
Thermal-cyclic atomic layer etching of Co blanket film and a fine pattern by plasma oxidation and organometallization were investigated. To obtain a smoothly etched surface and self-limiting etching, a two-step temperature-etching process was used. C
Externí odkaz: https://doaj.org/article/68110661fae64ddc8b04e42af94d50ff
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2
Akademický článek
Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
Autor: Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, Masaru Hori
Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at me
Externí odkaz: https://doaj.org/article/1e9fb81e7269474b8e5be47a212653d4
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4
Isotropic atomic layer etchings of various materials by using dry chemical removal
Autor: Hiroto Ohtake, Nobuya Miyoshi, Kazunori Shinoda, Sumiko Fujisaki, Yoshihide Yamaguchi
Publikováno v: Japanese Journal of Applied Physics. 62:SG0801
Isotropic atomic layer etching (ALE) has become an essential technology for the fabrication of logic transistors beyond 2 nm generation and NAND memory with more than 100 layers of stacking. There are promising etching technologies for isotropic ALE,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f53a70b1e216f61c98d4cc63e924aeaf
https://doi.org/10.35848/1347-4065/acaed0
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5
Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization
Autor: Sumiko Fujisaki, Yoshihide Yamaguchi, Hiroyuki Kobayashi, Kazunori Shinoda, Masaki Yamada, Hirotaka Hamamura, Kohei Kawamura, Masaru Izawa
Publikováno v: Applied Physics Letters. 121:122102
Thermal-cyclic atomic layer etching of a Co film and a fine pattern with a smooth etched surface by plasma oxidation and organometallization is demonstrated. One cycle of the etching process consists of a two-temperature process. In the first step, p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1e3d3c183379383e892db874a836096
https://doi.org/10.1063/5.0096949
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8
Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si
Autor: Kazunori Shinoda, Masaru Izawa, Yutaka Kouzuma, Hiroyuki Kobayashi, Nobuya Miyoshi, Masaru Kurihara
Publikováno v: Journal of Vacuum Science & Technology A. 39:052601
Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or thermally driven isotropic etching. In this work, we present a thermal ALE process for Si3N4 with high selectivity to SiO2 and poly-Si. This ALE process consists
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::573a314bc8dc8a27663a1a4178f0cbf2
https://doi.org/10.1116/6.0001179
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9
Isotropic atomic level etching of tungsten using formation and desorption of tungsten fluoride
Autor: Kohei Kawamura, Kenji Ishikawa, Nobuya Miyoshi, Masaru Hori, Yuko Hanaoka, Masaru Izawa, Kazunori Shinoda, Hiroyuki Kobayashi
Publikováno v: Advanced Etch Technology for Nanopatterning VII.
A selective, rapid thermal-cyclic atomic-level etching (ALE) of tungsten is developed. The first step of this process is exposing the surface of tungsten with hydrofluorocarbon plasma at −22°C to form a tungsten fluoride-based surface modified lay
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a4c290150398afa3b865d27ed0c9a03
https://doi.org/10.1117/12.2297241
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