Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Kazunori Komori"'
Autor:
Minoru Tachiki, Kazunori Komori, Shunichi Arisawa, Shuuichi Ooi, Kazuhiro Endo, Tadayuki Hayashi
Publikováno v:
Japanese Journal of Applied Physics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc40743eb88af39d087cdd73d584c7f4
https://doi.org/10.35848/1347-4065/ac0406
https://doi.org/10.35848/1347-4065/ac0406
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 138:449-454
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41e2ca1494898609c8c4f4d46b064db
https://doi.org/10.1541/ieejsmas.138.449
https://doi.org/10.1541/ieejsmas.138.449
Autor:
Shunichi Arisawa, Masashi Tachiki, Kazunori Komori, Kazuto Hirata, Takashi Mochiku, Shuuichi Ooi
Publikováno v:
Physical Review B. 100
To study the melting transition of a vortex crystal (or cluster) consisting of a small number of vortices confined in a mesoscopic-scale superconductor, $c$-axis magnetoresistance in the highly anisotropic high-${T}_{\mathrm{c}}$ superconductor ${\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d05abd5d9aef65527943bcb288d2762
https://doi.org/10.1103/physrevb.100.144509
https://doi.org/10.1103/physrevb.100.144509
Autor:
K. Igarashi, Masashi Tachiki, Hideaki Sakata, A. Kaneko, Kazuto Hirata, Shuuichi Ooi, Y. Fujisawa, Tadashi Machida, Takashi Mochiku, Kazunori Komori
Publikováno v:
Physica C: Superconductivity and its Applications. 530:35-37
We report on the scanning tunneling microscopy (STM) and spectroscopy (STS) study on a newly discovered superconductor, Ir 1 − x Pt x Te 2 . We previously found that the sample which shows superconductivity forms so called “patchwork structure (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a418072f1354d36586bdd502600e16
https://doi.org/10.1016/j.physc.2016.01.007
https://doi.org/10.1016/j.physc.2016.01.007
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1090-1093
We developed and fabricated self-aligned bottom gate LTPS backplanes without ion-implantation process. CW green laser is used to fabricate polycrystalline silicon, and self-alignment photo-sensitive SiO coating film is used as a channel etch stopper.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f75c3e0231a4fccc8ea32e3b8d5eb3
https://doi.org/10.1002/j.2168-0159.2012.tb05981.x
https://doi.org/10.1002/j.2168-0159.2012.tb05981.x
Publikováno v:
SID Symposium Digest of Technical Papers. 43:191-194
TFT backplane process for AM-OLED was developed by integrating a G8 compatible CW green laser annealing into conventional bottom-gate TFT process. Novel coating channel-etching-stopper (CES) and contact doping processes achieved the same high TFT per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b94939916c15822b98a64fb99094e3
https://doi.org/10.1002/j.2168-0159.2012.tb05744.x
https://doi.org/10.1002/j.2168-0159.2012.tb05744.x
Autor:
H. B. Wang, Kazunori Komori, Kazuto Hirata, Shuuichi Ooi, S. Arisawa, Takashi Mochiku, Minoru Tachiki
Publikováno v:
Journal of Physics: Conference Series. 969:012034
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d368b30d9e682c2b55cd95ee3e256da7
https://doi.org/10.1088/1742-6596/969/1/012034
https://doi.org/10.1088/1742-6596/969/1/012034
Publikováno v:
Thin Solid Films. 517:4520-4526
Silicon nanowires (SiNWs) with a single-crystalline Si core and a thermally oxidized shell (core-shell SiNWs) were synthesized by gold-catalyzed chemical vapor deposition followed by rapid thermal oxidation. To synthesize high-quality core-shell SiNW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454ecae03f88dd16cc20bb3be0281c86
https://doi.org/10.1016/j.tsf.2008.12.042
https://doi.org/10.1016/j.tsf.2008.12.042
Publikováno v:
The Journal of Physical Chemistry C. 111:15160-15165
The concentration of electrically active impurities in in situ boron (B)-doped silicon (Si) nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD) is studied by Raman spectroscopy. B-doped SiNWs exhibit an asymmetric Ram
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4d759e7569f95f52392241abc9a2d8
https://doi.org/10.1021/jp074495r
https://doi.org/10.1021/jp074495r
Autor:
Kazunori Komori, Kazuto Hirata, K. Igarashi, A. Kaneko, Tadashi Machida, Shuuichi Ooi, Minoru Tachiki, Y. Fujisawa, Takashi Mochiku, Hideaki Sakata
We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40afa1a0af44da0ed278309d250a1185
