Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Kazunori Iida"'
Autor:
Koutarou Sho, Hidefumi Mukai, Seiro Miyoshi, Satoshi Usui, Tsuyoshi Morisaki, Naoki Sato, Shinji Yamaguchi, Kazunori Iida, Ken Furubayashi
Publikováno v:
SPIE Proceedings.
The Self-Aligned Quadruple Patterning (SAQP) process is one of the most suitable techniques for the patterning of under-20 nm half-pitch lines and spaces (L/S) patterns because it requires only one lithography step, resulting in a relatively low proc
Autor:
Shinichi Ito, Yoko Iwakaji, Daizo Muto, Kotaro Sho, Tomoya Ori, Katsutoshi Kobayashi, Kazunori Iida, Tsukasa Azuma, Hirokazu Kato
Publikováno v:
Journal of Photopolymer Science and Technology. 22:619-623
Non-top coat resists are expected to be compatible with next generation high-speed scanners. Since they contain hydrophobic additives which are eccentrically located near the film surface so that they can form more hydrophobic film surface, they shou
Publikováno v:
Bulletin of the Chemical Society of Japan. 80:966-971
Diels–Alder reaction of furanoeremophilan-6β-ol (petasalbin) and its synthetic analogue, 4-hydroxy-4,5,6,7-tetrahydrobenzofuran, was studied using N-ethyl- and N-phenylmaleimides as the dienophiles...
Publikováno v:
KOBUNSHI RONBUNSHU. 64:329-342
Autor:
Kazunori Iida, Jun-ichi Yoshida
Publikováno v:
Macromolecules. 39:6420-6424
New binary systems consisting of benzylsilane(stannanes) and aminium salts initiate radical polymerization. Polymerization of vinyl monomers such as methyl methacrylate and butyl acrylate proceeded...
Publikováno v:
ResearcherID
有機テルル化合物を用いるリビングラジカル重合TERPの開発を行った. 有機テルル化合物と種々の共役ビニルモノマーとを加熱することで, 予想された分子量と狭い分子量分布をもつ重合
Publikováno v:
MACROMOLECULES. 36(11):3793-3796
Publikováno v:
Tetrahedron Letters. 42:5061-5064
Silyl tellurides react with organic halides to give the corresponding organotellurium compounds and silyl halides in good to excellent yields. Substitution proceeds in polar solvents, such as acetonitrile, but not in nonpolar solvents under identical
Autor:
Tomoya Oori, Kazunori Iida, Keisuke Kikutani, Katsutoshi Kobayashi, Eishi Shiobara, Kentaro Matsunaga, Katsumi Yamamoto, Fumiki Aiso, Koji Hashimoto, Koutarou Sho
Publikováno v:
SPIE Proceedings.
The spacer patterning process is one of the strongest double patterning technology candidates for fabricating 2xnm node semiconductor devices by ultra-low-k1 lithography. However, a severe problem exists with this process, it has an excessive number
Publikováno v:
ChemInform. 32
Silyl tellurides react with organic halides to give the corresponding organotellurium compounds and silyl halides in good to excellent yields. Substitution proceeds in polar solvents, such as acetonitrile, but not in nonpolar solvents under identical