Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Kazunari Ishimaru"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 737-743 (2022)
In today’s data-driven society, memory is an unavoidable component. IoT and 5G are accelerating data generation exponentially, and the demands of high-capacity memory are increasing. Flash memory is a crucial infrastructure component and inevitable
Externí odkaz:
https://doaj.org/article/978fa323260e40998e56c81cf9be3490
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1103-1109 (2021)
Static random-access memory (SRAM) is an essential component for realizing large-scale integration (LSI). The future transition to a 48 V DC supply in datacenters and electric vehicles acting as mobile edge servers will increase the demand for a bipo
Externí odkaz:
https://doaj.org/article/a7cd4cb446024bef9d857380960ef138
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1197-1199 (2018)
Performance improvement by simple device scaling is running out of steam. Design and Technology Co-Optimization (DTCO) and System and Technology Co-Optimization (STCO) are the hot topics to overcome scaling issues by collaboration among device, circu
Externí odkaz:
https://doaj.org/article/eadae17b9c9c4038a7d9f2288198a2d6
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1103-1109 (2021)
Static random-access memory (SRAM) is an essential component for realizing large-scale integration (LSI). The future transition to a 48 V DC supply in datacenters and electric vehicles acting as mobile edge servers will increase the demand for a bipo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab0d2146fd427c502abcf098f084ef8
https://ieeexplore.ieee.org/document/9614349/
https://ieeexplore.ieee.org/document/9614349/
Autor:
Kazunari Ishimaru
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
In today's advanced information society, the amount of data being generated is exploding, and within a few years, the annual amount of data generated is expected to exceed 100ZB [1] . The data is not only created by people, but also by the machines.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::288331926666d1a432c629631f59d675
https://doi.org/10.23919/iwjt52818.2021.9609367
https://doi.org/10.23919/iwjt52818.2021.9609367
Autor:
Kazunari Ishimaru
Publikováno v:
IRPS
It was more than 50 years ago, the first floating gate MOS transistor was proposed and 30 years has passed after the first NAND flash memory was commercialized. The NAND flash memory kept increasing its capacity by introducing new technology with dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab436ac5e46f814d89c0c12d3a177a74
https://doi.org/10.1109/irps46558.2021.9405182
https://doi.org/10.1109/irps46558.2021.9405182
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1197-1199 (2018)
Performance improvement by simple device scaling is running out of steam. Design and Technology Co-Optimization (DTCO) and System and Technology Co-Optimization (STCO) are the hot topics to overcome scaling issues by collaboration among device, circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4348bb3a2f4dc4744885b8e2a16b02ba
https://ieeexplore.ieee.org/document/8576496/
https://ieeexplore.ieee.org/document/8576496/
Autor:
Kazunari Ishimaru
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Now everything is connected and because of the data explosion, data generation per year will exceed 160ZB in 2025. Non-volatile memory is a key component because store, manage and utilize those data are very important. The NAND flash is an inevitable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853ff236a4878f999ec78c64274e0a36
https://doi.org/10.1109/icsict.2018.8564815
https://doi.org/10.1109/icsict.2018.8564815
Autor:
K. Kagimoto, K. Nagaoka, K. Adachi, M. Kamiyashiki, Y. Ito, Akira Hokazono, Kazunari Ishimaru, A. Hidaka, Masakazu Goto, Toshitaka Miyata, M. Kamimura, S. Hirooka, Shigeru Kawanaka, Yohji Watanabe, Tatsuya Ohguro, H. Tanaka
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We propose Multi Gate Oxide — Dual Work-Function (MGO-DWF)-MOSFET which is suitable for low power AB-class RF power amplifier (RF PA). This was examined for the first time by comparing with a standard Cascode connection circuitry composed of LV- an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eda87870c63bf0550a6566fd6ccb036
https://doi.org/10.1109/iedm.2015.7409769
https://doi.org/10.1109/iedm.2015.7409769
Autor:
Shom Ponoth, Arvind Kumar, J. Kuss, Pranita Kulkarni, Frederic Boeuf, Ali Khakifirooz, Balasubramanian S. Haran, Effendi Leobandung, Kangguo Cheng, Qing Liu, Mukesh Khare, Maud Vinet, Scott Luning, Masami Hane, T. Yamamoto, Nicolas Loubet, Prasanna Khare, Walter Kleemeier, Terence B. Hook, Frederic Monsieur, Mariko Takayanagi, Thomas Skotnicki, Stephane Monfray, Huiming Bu, Ron Sampson, Kazunari Ishimaru, Sanjay Mehta, Jin Cai, Bruce B. Doris, Atsushi Yagishita
Publikováno v:
ECS Transactions. 34:37-42
We report fully-depleted UTBB devices with a gate length (LG) of 25nm and BOX thickness (TBOX) at 25nm, fabricated with a 22nm technology ground rule, featuring conventional gate first high-K/metal and raised source/drain (RSD) process. Competitive d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148eaf103c2cef33d9dfa1a0b2d0786f
https://doi.org/10.1149/1.3567556
https://doi.org/10.1149/1.3567556