Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kazumitsu Tanaka"'
Publikováno v:
SPIE Proceedings.
We have developed a high alignment-accuracy electron beam (EB) mask writing processes of phase shift layer using alignment-and-height marks. The new process consists of (1) First layer writing with “alignment-and-height” marks on peripheral area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6238eeb43b004873b3b50fd1d9079f
https://doi.org/10.1117/12.557758
https://doi.org/10.1117/12.557758
Autor:
Kazumitsu Tanaka, Junji Hirumi, Koki Kuriyama, Morihisa Hoga, Takashi Matuzaka, Ryoichi Yoshikawa, Yutaka Hojo, Nobuyuki Yoshioka
Publikováno v:
SPIE Proceedings.
It depends for the writing time of variable shaped electron-beam (VSB) writing system on the number of writing shots. For shortening of writing time, it is most effective to reduce the number of shots. However, Resolution Enhancement Technologies (RE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7f5c99293fad6217e59ece150f251e
https://doi.org/10.1117/12.504259
https://doi.org/10.1117/12.504259
Publikováno v:
SPIE Proceedings.
An electron beam mask writing system JBX-9000MV for 150- 180nm technology node masks was developed by JEOL Ltd. and its design concept, technologies introduced and results of initial evaluation were reported in 1998. We have improved this system to c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b94469323a3406e50d0b54529f6c0a1
https://doi.org/10.1117/12.438404
https://doi.org/10.1117/12.438404
Publikováno v:
SPIE Proceedings.
An electron beam mask writing system JBX-9000MV for 150- 190nm technical node masks was improved to cope with the production of masks for 130nm technology node. Some of the new technologies developed for the improvement and their results are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51444ce3d64914a9ab25926b09a3c424
https://doi.org/10.1117/12.436697
https://doi.org/10.1117/12.436697
Publikováno v:
SPIE Proceedings.
JEOL has developed an E-Beam lithography system JBX-9000MV with a vector scan and variable shaped beam (VSB) electron optics for the manufacture of 180nm - 150nm devices masks. This system employs 50kV accelerating voltage, low space charge effect co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e6eb423451fc84425ce054c28995b8e
https://doi.org/10.1117/12.373325
https://doi.org/10.1117/12.373325
Publikováno v:
SPIE Proceedings.
One of the keys for ULSI lithography at a feature size ranging from 180 nm to 150 nm is a stable supply of ultra high precision reticle masks. To meet this demand, we have developed a new electron beam lithography system for reticle masks which offer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf77697eb303fc7a36c0433192b8fc0
https://doi.org/10.1117/12.332823
https://doi.org/10.1117/12.332823
Publikováno v:
SPIE Proceedings.
A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bb35ebf2c870150cedde793a6a49db7
https://doi.org/10.1117/12.328826
https://doi.org/10.1117/12.328826
Publikováno v:
SPIE Proceedings.
A higher quality electron beam (EB) mask lithography system is now required in an advanced field aimed at 1 Gbit DRAM chips. For this purpose, photomask accuracies of 0.03 micrometers to 0.02 micrometers are needed, for the feasibility of an EB litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1814bd1c019960e21c196ef9e02e3aec
https://doi.org/10.1117/12.212763
https://doi.org/10.1117/12.212763
Autor:
Kiyohito Kumagai, Osamu Hosoda, Iwao Watanabe, Motohiro Naitou, Yuu Ohhashi, Kazumitsu Tanaka, Yasushi Kokubo, Takahide Sakata
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2842
A He gas‐phase ion source having a three‐electrode acceleration lens that can change the acceleration energy and magnification independently was developed. This source allows application of acceleration voltages up to 100 kV and extraction voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8afc9d1d50dc0a9b44e6b2d59cd7a6
https://doi.org/10.1116/1.585970
https://doi.org/10.1116/1.585970
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