Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kazumasa Horita"'
Autor:
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085114-085114-5 (2020)
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V)
Externí odkaz:
https://doaj.org/article/9410cde437f6408382a7fe2082e983f9
Autor:
Kazumasa Horita, Tsuyoshi Kagami, Ryuichiro Kamimura, Daisuke Hironiwa, Yasuhiro Morikawa, Takashi Kurimoto
Publikováno v:
2021 International Conference on Electronics Packaging (ICEP).
Advanced packaging is required to have higher performance, smaller size, and lower energy consumption, thus a widely variety of materials have been used and the writing layer becomes denser. In this background, it is expected that it would be necessa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3280d833f3bdba9e89916db65b37e594
https://doi.org/10.23919/icep51988.2021.9451951
https://doi.org/10.23919/icep51988.2021.9451951
Autor:
Takahiro Sawada, Masaaki Hirakawa, Kazumasa Horita, Tsutomu Nishihashi, Hirohiko Murakami, Junki Nagakubo
Publikováno v:
SID Symposium Digest of Technical Papers. 49:28-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf59d4d38d80c077d77a302ac932eed4
https://doi.org/10.1002/sdtp.12483
https://doi.org/10.1002/sdtp.12483
Autor:
Shin Kikuchi, Kazumasa Horita, Natsuki Fukuda, Yutaka Nishioka, Koukou Suu, Isamu Yogosawa, Kazunori Fukuju
Publikováno v:
MRS Proceedings. 1430
This paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1aac33e7d12eff76c39c5199989d88
https://doi.org/10.1557/opl.2012.1021
https://doi.org/10.1557/opl.2012.1021
Autor:
Yutaka Kokaze, Kazumasa Horita, Natsuki Fukuda, Koukou Suu, Hidenao Kurihara, Yutaka Nishioka, Yoshiaki Yoshida
Publikováno v:
MRS Proceedings. 1250
Recently the Flash Memory is scaling limit, Thus the Memory of various types is now under study for the next generation large capacity nonvolatile memory. Resistance random access memory (ReRAM) is attracts much attention due to its advantage for int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9976e6acaf26535b89723a97ccbc59
https://doi.org/10.1557/proc-1250-g12-12
https://doi.org/10.1557/proc-1250-g12-12