Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kazuma Yoshimizu"'
Autor:
Tomohisa Mizuno, Rikito Kanazawa, Kazuhiro Yamamoto, Kohki Murakawa, Kazuma Yoshimizu, Midori Tanaka, Takashi Aoki, Toshiyuki Sameshima
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292c58846e74c592cb052b30ab7ed43c
https://doi.org/10.7567/ssdm.2020.k-9-04
https://doi.org/10.7567/ssdm.2020.k-9-04
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1014
We experimentally studied the influence of both impurity density and dangling-bond density on PL emissions from group-IV-semiconductor quantum-dots (IV-QDs) of Si and SiC fabricated by hot-ion implantation technique, to improve the PL intensity (I PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cbac0097c531bf7d8635e2fa97302ee
https://doi.org/10.35848/1347-4065/ac3dc9
https://doi.org/10.35848/1347-4065/ac3dc9
Autor:
Midori Tanaka, Tomohisa Mizuno, Toshiyuki Sameshima, Takashi Aoki, Kazuhiro Yamamoto, Rikito Kanazawa, Kazuma Yoshimizu, Kohki Murakawa
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBK08
We experimentally studied three types of group-IV-semiconductor quantum-dots (IV-QDs) of Si-, SiC-, and C-QDs in a thermal SiO2 layer that were fabricated using a very simple hot-ion implantation technique for Si+, double Si+/C+, and C+ into the SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e0a7e77012300ac1265bb7bc5d2e2d
https://doi.org/10.35848/1347-4065/abdb80
https://doi.org/10.35848/1347-4065/abdb80