Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kazuma Furutani"'
Autor:
Kazuki Tsuda, Kazuma Furutani, Yuto Yakubo, Hiromichi Godo, Yoshinori Ando, Atsutake Kosuge, Toru Nakura, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 594-604 (2024)
We prototyped a true analog current computing multilayer neural network (NN) chip, where multiple analog in-memory computing (AiMC) circuit blocks are connected to each other via simple analog non-linear operation circuits. The true analog current co
Externí odkaz:
https://doaj.org/article/0831048dab7d4f3b95130223cf952c4a
Autor:
Kouhei Toyotaka, Yuto Yakubo, Kazuma Furutani, Haruki Katagiri, Masashi Fujita, Yoshinori Ando, Toru Nakura, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 486-494 (2024)
Using a 3-D monolithic stacking memory technology of crystalline oxide semiconductor (OS) transistors, we fabricated a test chip having AI accelerator (ACC) memory for weight data of a neural network (NN), backup memory of flip-flops (FF), and CPU me
Externí odkaz:
https://doaj.org/article/4442c6379e414681ae1cfd2d32125415
Autor:
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown vo
Externí odkaz:
https://doaj.org/article/130a499579cf486f97ff60e88658e798
Autor:
Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa, Toru Nakura, Shunpei Yamazaki
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12552583eed1327c74191b38aa48506
https://doi.org/10.1109/isscc42615.2023.10067603
https://doi.org/10.1109/isscc42615.2023.10067603
Autor:
Shunpei Yamazaki, Takahiko Ishizu, Atsuo Isobe, Yoshinori Ando, Masahiro Fujita, Masashi Fujita, Kiyoshi Kato, Kazuma Furutani, Tsutomu Murakawa, Tomoaki Atsumi, Yuto Yakubo
Publikováno v:
IEEE Solid-State Circuits Letters. 2:293-296
This letter presents a microcontroller unit (MCU) that employs a $c$ -axis aligned crystalline indium–gallium–zinc oxide semiconductor FET (CAAC-IGZO FET) with an extremely low off-state current below the zepto-ampere (10−21 A) level. This MCU
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f5b9d24e77a2d5594cc27708a28637
https://doi.org/10.1109/lssc.2019.2952895
https://doi.org/10.1109/lssc.2019.2952895
Autor:
Kazuma Furutani, Yuto Yakubo, Shunpei Yamazaki, Tatsuya Onuki, Keita Sato, Yoshinori Ando, Saito Seiya, Tsutomu Murakawa, Eri Yamamoto, Takanori Matsuzaki, Kiyoshi Kato, Tomoaki Atsumi
Publikováno v:
ECS Transactions. 90:139-146
This paper reports the validation of our prototyped memory operating with 1.8-V power supply and low stand-by power, using 60-nm c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) field-effect transistors (FETs). Its operation evaluation verified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b7c0a52661fc6ca7b1960ac9868eac
https://doi.org/10.1149/09001.0139ecst
https://doi.org/10.1149/09001.0139ecst
Autor:
Shunpei Yamazaki, Yoshinori Ando, Yuto Yakubo, Atsuo Isobe, Masahiro Fujita, Kiyoshi Kato, Tsutomu Murakawa, Kazuma Furutani, Takahiko Ishizu, Masashi Fujita, Tomoaki Atsumi
Publikováno v:
VLSI Circuits
We have prototyped a microcontroller (MCU) that employs crystalline In–Ga–Zn oxide transistors having an extremely low off current below 10−21 A. The IGZO-based MCU can retain data during power gating in both of its processing unit and memory,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f154fda2e130515623946a84df71333
https://doi.org/10.23919/vlsic.2019.8778076
https://doi.org/10.23919/vlsic.2019.8778076
Autor:
Shuhei Maeda, Satoru Ohshita, Masahiro Fujita, Shunpei Yamazaki, Yuto Yakubo, Takashi Okuda, Daisuke Matsubayashi, Takahiko Ishizu, Yoshinori Ando, Kazuma Furutani, Tomoaki Atsumi, Kiyoshi Kato
Publikováno v:
ISSCC
Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eb676a1d0ab3b5165e7b8bd04b27590
https://doi.org/10.1109/isscc.2018.8310395
https://doi.org/10.1109/isscc.2018.8310395
Publikováno v:
ECS Transactions. 37:77-88
An oxide semiconductor has a wide band gap and low off-state current. We focused on the off-state characteristics of a transistor including an oxide semiconductor and concentrated on measuring the off-state current. We fabricated a circuit TEG that h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb67c1e6dd2254d91283444e6ec3075f
https://doi.org/10.1149/1.3600726
https://doi.org/10.1149/1.3600726
Autor:
Yasunori Kikuchi, Seichiro Kimura, Yuichiro Kanematsu, Takao Nakagaki, Kazuma Furutani, Yayoi Abe, Shoma Fujii
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2018:G0800001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8dca12badbaf5fc6eedfc05ecc6cf0
https://doi.org/10.1299/jsmemecj.2018.g0800001
https://doi.org/10.1299/jsmemecj.2018.g0800001