Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kazuma Funahashi"'
Publikováno v:
Physical Review B. 101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144efd3732f620c33088f27f58446a9c
https://doi.org/10.1103/physrevb.101.121111
https://doi.org/10.1103/physrevb.101.121111
Publikováno v:
Journal of the Physical Society of Japan. 90:024704
We performed a pump–probe optical reflectivity measurement with an applied uniaxial strain for bulk single crystals of BaV10O15 at room temperature. We found that with a compressive strain of ΔL/L ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8a0edade558136a04949a09d0e7b6c
https://doi.org/10.7566/jpsj.90.024704
https://doi.org/10.7566/jpsj.90.024704
Publikováno v:
Advanced Materials. 28:4111-4119
Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4d9aad43572fdeb2589f06706b406d2
https://doi.org/10.1002/adma.201503872
https://doi.org/10.1002/adma.201503872
Autor:
Takuo Saiki, T. Higashide, T. Ueno, Takuro Katsufuji, K. Tasaki, Kazuma Funahashi, M. Adachi, Y. Tahara, T. Kajita
Publikováno v:
Physical Review B. 98
We studied single crystals of orthorhombic ${\mathrm{Sr}}_{2}{\mathrm{VO}}_{4}$ containing spin-singlet dimers of ${\mathrm{V}}^{4+}\phantom{\rule{0.28em}{0ex}}(3{d}^{1})$ and those with Ti or Nb substituted for V. We found that both Ti and Nb doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653db6e6f8169735db14ad68e372de51
https://doi.org/10.1103/physrevb.98.184422
https://doi.org/10.1103/physrevb.98.184422
Autor:
Yuka, Tsuboi, Feijiu, Wang, Daichi, Kozawa, Kazuma, Funahashi, Shinichiro, Mouri, Yuhei, Miyauchi, Taishi, Takenobu, Kazunari, Matsuda
Publikováno v:
Nanoscale. 7(34)
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5502475441ae123b8ce38d40cc05c346
https://pubmed.ncbi.nlm.nih.gov/26257026
https://pubmed.ncbi.nlm.nih.gov/26257026
Autor:
Taishi Takenobu, Kazuma Funahashi, Yuhei Miyauchi, Kazunari Matsuda, Daichi Kozawa, Yuka Tsuboi, Shinichiro Mouri, Feijiu Wang
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::364a7dc069d7c755029ebc255c51a3fc
Autor:
Kazuma Funahashi, Yu Kakesu, Tomomasa Kajita, Yoshihito Obata, Yumiko Katayama, Kazunori Ueno, Takehito Suzuki, Checkelsky, Joseph George, Takuro Katsufuji
Publikováno v:
Journal of the Physical Society of Japan; 2019, Vol. 88 Issue 2, p024708-1-024708-8, 8p
Autor:
Taishi Takenobu, Yoshiaki Shoji, Imazu Naoki, Hiromichi Ohta, Kaito Kanahashi, Hiroyuki Shirae, Ko Nakayama, Naoki Tanaka, Suguru Noda, Takanori Fukushima, Kazuma Funahashi
Publikováno v:
Applied Physics Express. 10:035101
Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e7e5b3a430a03a4a3ab8500b7ef9f1d
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100736968
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100736968
Publikováno v:
Japanese Journal of Applied Physics. 54:06FF06
Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::736b5b1375679f50de5f964178810624
https://doi.org/10.7567/jjap.54.06ff06
https://doi.org/10.7567/jjap.54.06ff06
Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant.
Autor:
Kazuma Funahashi, Naoki Tanaka, Yoshiaki Shoji, Naoki Imazu, Ko Nakayama, Kaito Kanahashi, Hiroyuki Shirae, Suguru Noda, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu
Publikováno v:
Applied Physics Express; Mar2017, Vol. 10 Issue 3, p1-1, 1p