Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Kazukiyo Joshin"'
Autor:
Atsushi Yamada, Masaru Sato, Norikazu Nakamura, Naoya Okamoto, Kozo Makiyama, Yuichi Minoura, Junji Kotani, Kazukiyo Joshin, Shiro Ozaki, Toshihiro Ohki
Publikováno v:
IEEE Electron Device Letters. 40:287-290
This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d451053e15ab0c96207c500f487716f
https://doi.org/10.1109/led.2018.2884918
https://doi.org/10.1109/led.2018.2884918
Autor:
Toshihiro Ohki, Yoshitaka Niida, Kozo Makiyama, Naoya Okamoto, Shiro Ozaki, Kazukiyo Joshin, Yoichi Kamada, Masaru Sato
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 29:370-375
We have fabricated millimeter-wave gallium nitride high electron mobility transistors (GaN HEMTs) using methyl silsesquioxane (MSQ)-based inter-layer dielectric to suppress current collapse by enhancing the moisture resistance, and removed MSQ around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1685cc385629cfad6db89cf3d087bed7
https://doi.org/10.1109/tsm.2016.2599184
https://doi.org/10.1109/tsm.2016.2599184
Autor:
Shiro Ozaki, Naoya Okamoto, Yoichi Kamada, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Yoshitaka Niida, Kazukiyo Joshin
Publikováno v:
physica status solidi (a). 213:1259-1262
We have investigated the effect of oxidant sources on the performance of InAlN/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs). We clarified that the surface-oxide of InAlN comprises aluminum oxide (Al2O3) and indium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b9a6300aa5f3dd043ef01bf029cc01
https://doi.org/10.1002/pssa.201532773
https://doi.org/10.1002/pssa.201532773
Autor:
Toshihiro Ohki, Naoya Okamoto, Satoshi Masuda, Masaru Sato, Yoichi Kamada, Shiro Ozaki, Kazukiyo Joshin, Yoshitaka Niida, Kozo Makiyama
Publikováno v:
physica status solidi (a). 212:1153-1157
We have investigated the effect of moisture on current collapse of AlGaN/GaN high-electron mobility transistors (HEMTs) when using low dielectric constant (low-k) insulator films to reduce the parasitic capacitance of millimeter-wave amplifier monoli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1e847a92ae24b0e0c14be6ca7c9abd
https://doi.org/10.1002/pssa.201431665
https://doi.org/10.1002/pssa.201431665
Autor:
Yoshitaka Niida, Shiro Ozaki, Naoya Okamoto, Kazukiyo Joshin, Masaru Sato, Keiji Watanabe, Toshihiro Ohki, Kozo Makiyama, Satoshi Masuda
Publikováno v:
IEICE Transactions on Electronics. :923-929
SUMMARY Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35e39de48503eb1f0dd1c0d8e63a6544
https://doi.org/10.1587/transele.e97.c.923
https://doi.org/10.1587/transele.e97.c.923
Autor:
Kozo Makiyama, Yasuyuki Miyamoto, Keiji Watanabe, Yuichi Minoura, Yoshitaka Niida, Masaru Sato, Toshihiro Ohki, Naoya Okamoto, Shirou Ozaki, Kazukiyo Joshin, Y. Kamada
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89a3149a893ad66a63c586dc4bbcc6dd
https://doi.org/10.1109/csics.2016.7751045
https://doi.org/10.1109/csics.2016.7751045
Autor:
Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Yoshitaka Niida, Shirou Ozaki, Keiji Watanabe, Yasuyuki Miyamoto, Masaru Sato, Yuichi Minoura, Y. Kamada, Kazukiyo Joshin
Publikováno v:
2016 Lester Eastman Conference (LEC).
We demonstrated an excellent output power (P out ) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a W-band amplifier. To eliminate current collapse, a unique double-layer silicon nitride (SiN) passivation film with oxidatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea64be7957f812c94ffcd465da535825
https://doi.org/10.1109/lec.2016.7578927
https://doi.org/10.1109/lec.2016.7578927
Autor:
Kozo Makiyama, Naoya Okamoto, Shirou Ozaki, Masaru Sato, Kazukiyo Joshin, Y. Kamada, Yoshitaka Niida, Toshihiro Ohki
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
A 33 to 41-GHz Low Noise Amplifier (LNA) with a 3-dB Noise Figure (NF) using 0.12-µm InAlGaN/GaN HEMT was developed. The LNA consists of a two-stage common-gate amplifier with current reuse topology in order to obtain a high gain with low power cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a5480ce29f44b815b86a73ce0f0838f
https://doi.org/10.1109/mwsym.2016.7540307
https://doi.org/10.1109/mwsym.2016.7540307
Autor:
Keiji Watanabe, Masaru Sato, Naoya Okamoto, Shiro Ozaki, Yoshitaka Niida, Kazukiyo Joshin, Yuichi Minoura, Yoichi Kamada, Toshihiro Ohki, Kozo Makiyama
Publikováno v:
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0545226818249698443ccd941d9cfa18
https://doi.org/10.1109/pawr.2016.7440153
https://doi.org/10.1109/pawr.2016.7440153
Autor:
Kozo Makiyama, Yasuyuki Miyamoto, Yuichi Minoura, Naoya Okamoto, Shirou Ozaki, Yoshitaka Niida, Keiji Watanabe, Y. Kamada, Toshihiro Ohki, Kazukiyo Joshin
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
In this work, we demonstrated an excellent output power (Pout) density of 3.0 W/mm at 96 GHz using a novel collapse-free InAlGaN/GaN-HEMT with an 80-nm gate for a millimeter-wave amplifier. The developed devices showed basic reliability for commercia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4b0958fda898233703c80a9819f204
https://doi.org/10.1109/iedm.2015.7409659
https://doi.org/10.1109/iedm.2015.7409659