Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kazuki Kawashita"'
Autor:
Mayu Tachibana, Shuhei Sonoi, Kyosuke Noguchi, Riku Katamawari, Ryota Oyamada, Kazuki Motomura, Takeshi Hizawa, Kazuki Kawashita, Yasuhiko Ishikawa
Publikováno v:
ECS Transactions. 104:147-155
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab0f094fef58dfe16ffbcb889e22b132
https://doi.org/10.1149/10404.0147ecst
https://doi.org/10.1149/10404.0147ecst
Autor:
Junichi Fujikata, Masataka Noguchi, Kazuki Kawashita, Riku Katamawari, Hideki Ono, Daisuke Shimura, Yosuke Onawa, Hiroyuki Takahashi, Hiroki Yaegashi, Yasuhiko Ishikawa, Takahiro Nakamura
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731eb8a21366a596964d852bab456bc1
https://doi.org/10.7567/ssdm.2020.e-9-01
https://doi.org/10.7567/ssdm.2020.e-9-01
Publikováno v:
Journal of Vacuum Science & Technology B. 39:042204
Si-capping-induced surface roughening, accompanying Si–Ge alloying, is reported for strip structures of Ge selectively grown on Si via ultrahigh vacuum chemical vapor deposition. A 0.7-μm-wide strip structure of Ge running in the [110] direction,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eca085e636be2fd0cf3d24b3122aef2
https://doi.org/10.1116/6.0001142
https://doi.org/10.1116/6.0001142
Publikováno v:
Nanophotonics and Micro/Nano Optics V.
A spontaneous formation of SiGe is reported, which is induced at mesa sidewalls of Si-capped Ge epitaxial layers selectively grown on Si. Ultrahigh-vacuum chemical vapor deposition is used to grow Ge mesa stripes on (001) Si wafers partially covered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3836892cfc2b112a4abb4668a09df48
https://doi.org/10.1117/12.2537485
https://doi.org/10.1117/12.2537485
Autor:
Kazuki Kawashita, Hiroyuki Takahashi, Takahiro Nakamura, Hideki Ono, Masataka Noguchi, Riku Katamawari, Junichi Fujikata, Daisuke Shimura, Michiharu Nishimura, Yasuhiko Ishikawa, Hiroki Yaegashi, Shigeki Takahashi
Publikováno v:
Optics Express. 28:33123
We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide (Si WG) of a lateral pn junction for high-bandwidth optical interconnect. By decreasing the widths of selectively grown Ge layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9db9919a9e032bc2146bce83eaf5ce29
https://doi.org/10.1364/oe.405447
https://doi.org/10.1364/oe.405447
Publikováno v:
ECS Meeting Abstracts. :1007-1007
Ge epitaxial layers on Si have been widely studied in Si photonics for active photonic devices such as photodetectors operating in the communication wavelengths (1.3–1.6 µm). The control in the direct bandgap of Ge or the fundamental optical absor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dced7729d475efe6dee4e62d75c31f50
https://doi.org/10.1149/ma2018-02/31/1007
https://doi.org/10.1149/ma2018-02/31/1007
Autor:
H. Takahashi, Shigeki Takahashi, Hideki Ono, Kazuki Kawashita, Masataka Noguchi, Hiroki Yaegashi, Hideaki Okayama, Daisuke Shimura, Riku Katamawari, Yosuke Onawa, Yasuhiko Ishikawa, Takahiro Nakamura, Junichi Fujikata, Seok-Hwan Jeong
Publikováno v:
Scopus-Elsevier
OFC
OFC
We present high-speed of 100Gbps for PAM-4 signal and 16λ-WDM operations of a Ge/Si EAM in C-band. Operation wavelengths could be controlled by Ge/Si stack width, and 16λ operation was demonstrated at 50 Gbps.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de16ac852aa7e9cdb099905f4e34f955
http://www.scopus.com/inward/record.url?eid=2-s2.0-85085175643&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85085175643&partnerID=MN8TOARS
