Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Kazuki Denpoh"'
Autor:
Kazuki Denpoh
Publikováno v:
Vacuum and Surface Science. 65:348-354
Publikováno v:
Journal of Physics D: Applied Physics. 56:344002
A novel strategy to solve the Boltzmann equation with variable reduced electric field E / N by using an artificial neural network (ANN) is introduced, where E is the electric field and N is the gas number density. In this method, the ANN learns the e
Understanding plasma enhanced chemical vapor deposition mechanisms in tetraethoxysilane-based plasma
Publikováno v:
Journal of Vacuum Science & Technology B. 41:022208
The mechanisms of plasma-enhanced chemical vapor deposition using tetraethoxysilane (TEOS)-based plasma were investigated by monitoring the plasma via experimental and computational approaches using a quadrupole mass spectrometer/residual gas analyze
Autor:
Kazuki Denpoh, Kenichi Nanbu
Publikováno v:
Journal of Vacuum Science & Technology A. 40:063007
The ion-molecule collision model for endothermic reactions created by Denpoh and Nanbu, which is the so-called “Denpoh–Nanbu theory (DNT),” has been extended to exothermic reactions. In addition to short-range charge exchanges between ions and
Autor:
Kazuki Denpoh
Publikováno v:
Vacuum and Surface Science. 62:318-323
Autor:
Yusuke Suzuki, Takamichi Kikuchi, Toshio Hasegawa, Yuichiro Wagatsuma, Tsuyoshi Moriya, Kazuki Denpoh, Shinya Iwashita
Publikováno v:
Surface and Coatings Technology. 350:740-744
A plasma enhanced atomic layer deposition (PEALD) process combined with ion energy control of capacitively couples radio frequency (CCRF) discharges in Ar/H2 gas mixture for fabricating Ti films was performed, and the impact of the ion energies on th
Autor:
Kazuki Denpoh
Publikováno v:
Journal of the Vacuum Society of Japan. 60:471-474
Autor:
Kazuki Denpoh
Publikováno v:
Japanese Journal of Applied Physics. 60:016002
Effects of driving frequency on the plasma density in capacitively coupled plasmas (CCPs) have been investigated at Torr-order pressures which are commonly used in film deposition processes (1 Torr = 133.322 Pa). Using a particle-in-cell, Monte Carlo
Publikováno v:
Japanese Journal of Applied Physics. 59:SHHB02
Mechanisms of titanium (Ti) thin films deposited in plasma-enhanced (PE) chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes have been elucidated via multiscale plasma and feature profile simulations. Firstly, by iterating a 2
Publikováno v:
Japanese Journal of Applied Physics. 58:066003
Reactions for dissociative ionization and neutral dissociation collisions between an electron and a tetraethoxysilane [Si(OC2H5)4, TEOS] molecule are reported, and neutral dissociation cross sections are calculated by applying the classical Rice–Ra