Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Kazuki, Hagihara"'
Autor:
Takeharu Motokawa, Ryu Komatsu, Shingo Kanamitsu, Keisuke Tsuda, Hideaki Sakurai, Noriko Iida nee Sakurai, Tetsuo Harada, Takeo Watanabe, Kazuki Hagihara, Machiko Suenaga
Publikováno v:
Photomask Technology 2020.
An essential element of sub-15 nm nanoimprint lithography is to create fine patterns on a template. However, it is challenging to create sub-15 nm half-pitch patterns on a template by direct drawing with a resist, owing to poor resolution and low sen
Publikováno v:
Photomask Technology 2020.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors. NIL is very useful technology for fine pattern fabrications compared to conventional optical lithography. NIL technology
Autor:
Masato Saito, Ryu Komatsu, Kazuki Hagihara, Takeharu Motokawa, Syuichi Taniguchi, Rikiya Taniguchi, Akihiko Ando, Shingo Kanamitsu, Ryoji Yoshikawa, Hideaki Sakurai, Masato Naka, Ryota Seki, Eiji Yamanaka, Machiko Suenaga, Noriko Iida nee Sakurai
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Nanoimprint lithography (NIL) is promising technology for next generation lithography for the fabrication of semiconductor devices. The advantages of NIL are simpler process, less design rule restriction, which lead to lower cost-of-ownership, compar
Autor:
Kazuki, Hagihara
Publikováno v:
山梨医科学雑誌 = 山梨医科学雑誌. 33(1):31-35
The patient is a 73 year-old woman who was hospitalized in the internal medicine ward for diarrhea, vomiting, and loss of balance. The blood sample showed hyponatremia. Polydipsia was suspected because she consumed 4-5 liters of water a day. The horm
Autor:
Kiyoshi Ogata, Rikiya Taniguchi, Takashi Hirano, Kazuhiko Omote, Kazuki Hagihara, Naoya Hayashi, Eiji Yamanaka, Yoshiyasu Ito
Publikováno v:
Photomask Technology 2018.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors[1][2]. NIL is very useful technology for pattern fabrication in high resolutions and low costs compared to conventional o
Autor:
Yoshiyasu Ito, Kazuki Hagihara, Naoya Hayashi, Kiyoshi Ogata, Kazuhiko Omote, Rikiya Taniguchi, Eiji Yamanaka
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography in semiconductors. NIL is very useful technology for pattern fabrication in high resolution compared to conventional optical lithography. NIL tec
Autor:
Masamitsu Ito, Shingo Kanamitsu, Kazuki Hagihara, Yukiyasu Arisawa, Kunihiro Ugajin, Machiko Suenaga, Masato Saito, Keisuke Yagawa, Takeharu Motokawa, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from
Shp2 acts downstream of SDF-1α/CXCR4 in guiding granule cell migration during cerebellar development
Publikováno v:
Developmental Biology. 334(1):276-284
Shp2 is a non-receptor protein tyrosine phosphatase containing two Src homology 2 (SH2) domains that is implicated in intracellular signaling events controlling cell proliferation, differentiation and migration. To examine the role of Shp2 in brain d
Publikováno v:
Proceedings of the National Academy of Sciences. 101:16064-16069
Shp2, a Src homology 2-containing tyrosine phosphatase, has been implicated in a variety of growth factor or cytokine signaling pathways. However, it is conceivable that this enzyme acts predominantly in one pathway versus the others in a cell, depen
Autor:
Masato Saito, Takeharu Motokawa, Keisuke Yagawa, Masamitsu Itoh, Yoshihito Kobayashi, Kunihiro Ugajin, Kazuki Hagihara, Machiko Suenaga
Publikováno v:
SPIE Proceedings.
ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lith