Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kazuhiro Ohba"'
Autor:
Tetsuya Mizuguchi, Keiichi Tsutsui, Shuichiro Yasuda, Hiroaki Sei, Masayuki Shimuta, Akira Kouchiyama, Jun Okuno, Seiji Nonoguchi, Katsuhisa Aratani, Kazuhiro Ohba, Takashi Yamamoto, Wataru Otsuka, Tsunenori Shiimoto, Takeyuki Sone
Publikováno v:
2017 Symposium on VLSI Technology.
This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns progr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c61fe1a6e0315a223021efe2fe43351
https://doi.org/10.23919/vlsit.2017.7998189
https://doi.org/10.23919/vlsit.2017.7998189
Autor:
Tetsuya Yamamoto, Hiroshi Kano, Yutaka Higo, Kazuhiro Ohba, Tetsuya Mizuguchi, Masanori Hosomi, Kazuhiro Bessho, Minoru Hashimoto, Hiroyuki Ohmori, Takeyuki Sone, Keitaro Endo, Shinya Kubo, Hiroaki Narisawa, Wataru Otsuka, Nobumichi Okazaki, Makoto Motoyoshi, Hajime Nagao, Tsutomu Sagara
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p10P503-1-10P503-6, 6p, 1 Black and White Photograph, 11 Graphs
Autor:
Masaki Kudo, Ichiro Fujiwara, Kazuhiro Ohba, Yasuo Takahashi, Masayuki Shimuta, Masashi Arita
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f816ec515968e5e15a61bf343952698c
https://doi.org/10.1109/imw.2015.7150312
https://doi.org/10.1109/imw.2015.7150312
Publikováno v:
Zairyo-to-Kankyo. 45:209-216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13852781a75e07de209fa06b43ebc6b2
https://doi.org/10.3323/jcorr1991.45.209
https://doi.org/10.3323/jcorr1991.45.209
Publikováno v:
Materials Science and Engineering: A. :210-214
The temperature interval of the supercooled liquid region before crystallization in Zr 65 − x Al 7.5 Ni 10 Cu 17.5 Be x alloys is the largest for the x = 0 alloy. It is therefore said that the addition of Be with an extremely small atomic size as c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb26ff280fd2028e4e055ca19ff08d92
https://doi.org/10.1016/0921-5093(94)90195-3
https://doi.org/10.1016/0921-5093(94)90195-3
Publikováno v:
Materials Transactions, JIM. 34:1234-1237
Bulky amorphous alloys in a cylindrical shape with diameters up to 16 mm were found to form by water quenching a Zr 65 Al 7.5 Ni 10 Cu 17.5 melt in a quartz tube. The amorphous phase of this alloy has the widest temperature interval of supercooled li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed20d94ad6cbe2ce2302f8c740aafd8
https://doi.org/10.2320/matertrans1989.34.1234
https://doi.org/10.2320/matertrans1989.34.1234
Autor:
Akihiro Maesaka, Takeyuki Sone, Naomi Yamada, Keitaro Endo, Shuichiro Yasuda, Kazuhiro Ohba, Hiroaki Narisawa, Tsunenori Shiimoto, Satoshi Sasaki, Tomohito Tsushima, Akira Kouchiyama, Katsuhisa Aratani, Tetsuya Mizuguchi
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We report a novel nonvolatile dual-layered electrolytic resistance memory composed of a conductive Cu ion activated layer and a thin insulator for the first time. An ON/OFF mechanism of this new type memory is postulated as follows: Cu ions pierce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb88351a703004b83a1754c7af4283
https://doi.org/10.1109/iedm.2007.4419064
https://doi.org/10.1109/iedm.2007.4419064
Publikováno v:
Materials Transactions, JIM. 36:876-878
The continuous-cooling-transformation (CCT) curves from supercooled liquid to the amorphous or crystalline phase were measured by conventional thermal analysis for Zr 50 Al 10 Ni 10 Cu 20 and Zr 55 Al 10 Ni 10 Cu 25 alloys. Based on the CCT curves, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a624396bda2fce09b474875160adc8
https://doi.org/10.2320/matertrans1989.36.876
https://doi.org/10.2320/matertrans1989.36.876
Autor:
Minoru Hashimoto, Kazuhiro Bessho, Tetsuya Mizuguchi, Kazuhiro Ohba, Masanori Hosomi, Hiroshi Kano, Yutaka Higo
Publikováno v:
IEEE International Digest of Technical Papers on Magnetics Conference.
Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff84bbf176facf34fa94836a3d5a7f0a
https://doi.org/10.1109/intmag.2002.1000779
https://doi.org/10.1109/intmag.2002.1000779
Autor:
Hiroaki Narisawa, Hiroshi Kano, Masanori Hosomi, Kazuhiro Ohba, Yutaka Higo, Kazuhiro Bessho, K. Yamane
Publikováno v:
Applied Physics Letters. 87:082502
A calculation of the intrinsic spin transfer switching current Ic0 is realized in the magnetic tunnel junctions (MTJs). Ic0 is determined by the distribution of Ic in repeated measurements, assuming the linear decrease of the thermal stability by inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d24f641dadef386f64b16fd3f8824d06
https://doi.org/10.1063/1.2011795
https://doi.org/10.1063/1.2011795