Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Kazuhiro Nagase"'
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125014-125014-5 (2020)
Temperature-dependent electroluminescence measurements are performed for 265-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) grown on AlN substrates. The external quantum efficiency (EQE) increases as the temperature decreases from
Externí odkaz:
https://doaj.org/article/509d1ffc358340e6b0cdc39f513a95cd
Autor:
Akira Yoshikawa, Tomohiro Morishita, Naohiro Kuze, Kazuhiro Nagase, Hasegawa Ryosuke, Yoshitaka Moriyasu
Publikováno v:
Journal of Crystal Growth. 464:211-214
We have developed InAs x Sb 1−x -based photovoltaic infrared sensors (PVS) for room temperature operation by metalorganic vapor phase epitaxy (MOVPE). To obtain high performance, we improved the crystallinity of the InAs 0.12 Sb 0.88 absorber layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d26933572a603dc0fd461bf0ed09ab
https://doi.org/10.1016/j.jcrysgro.2016.12.002
https://doi.org/10.1016/j.jcrysgro.2016.12.002
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125014-125014-5 (2020)
Temperature-dependent electroluminescence measurements are performed for 265-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) grown on AlN substrates. The external quantum efficiency (EQE) increases as the temperature decreases from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbd1f26a575effdcd5233d76523e8aca
https://doi.org/10.1063/5.0024179
https://doi.org/10.1063/5.0024179
Publikováno v:
Applied Physics Express. 13:102005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ce20c740b8ea8ba6cfa088e3d923f6
https://doi.org/10.35848/1882-0786/abb86f
https://doi.org/10.35848/1882-0786/abb86f
Autor:
J. R. Grandusky, Akira Yoshikawa, Kazuhiro Nagase, Leo J. Schowalter, Hasegawa Ryosuke, Miller Amy C Wilson, Satoshi Yamada, Jonathan Mann, Tomohiro Morishita
Publikováno v:
Applied Physics Express. 13:022001
We demonstrate high output power UVC-LEDs from 230 to 237 nm on AlN single-crystal substrates. The UVC-LEDs show a single peak in the electroluminescence spectrum, from 20 to 300 mA. Forward voltages were typically ~7 V at 100 mA while measured initi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d507737ce9760b15b0760d2b7f30e6
https://doi.org/10.35848/1882-0786/ab65fb
https://doi.org/10.35848/1882-0786/ab65fb
Autor:
Edson Gomes Camargo, Kazuhiro Nagase, Yoshifumi Kawakami, Masaru Ozaki, Koichiro Ueno, Hidetoshi Endo, Masayuki Sato, Yoshitaka Moriyasu, Naohiro Kuze, Kazutoshi Ishibashi
Publikováno v:
physica status solidi c. 3:431-434
A novel microchip-sized InSb photodiode infrared sensor (InSb PDS) operating at room temperature is reported. There is no power consumption on the InSb PDS itself, since it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d176eb32069d779fda3d781c6bcd97
https://doi.org/10.1002/pssc.200564154
https://doi.org/10.1002/pssc.200564154
Autor:
Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, Kazuhiro Nagase, Saki Ushida, Akira Yoshikawa, Motoaki Iwaya
Publikováno v:
Applied Physics Letters. 111:191103
An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e288816c309130dd6dd8759bc501df74
https://doi.org/10.1063/1.5001979
https://doi.org/10.1063/1.5001979
Publikováno v:
Journal of Crystal Growth. 323:522-524
We studied the effects of an AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic high electron mobility transistors (mHEMTs) on GaAs substrate. By implementing an AlGaAsSb electron supply layer, we drastically improved the electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a00467472aa2de1139ace97da7cec1
https://doi.org/10.1016/j.jcrysgro.2010.12.078
https://doi.org/10.1016/j.jcrysgro.2010.12.078
Autor:
Kazuhiro Nagase, Ichiro Shibasaki, Masaru Ozaki, S. Miya, A. Ichii, Tatsuro Iwabuchi, Naohiro Kuze, S. Muramatsu
Publikováno v:
Journal of Electronic Materials. 25:415-420
InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cbdda2b34ec41608d28824f3bc4bcb
https://doi.org/10.1007/bf02666613
https://doi.org/10.1007/bf02666613
Autor:
Yuichi Kanayama, Ito Takashi, Takashi Yoshida, Kazuhiro Nagase, Masaki Yamamoto, Tatsuro Iwabuchi, Kentaro Sako, Ichiro Shibasaki, Fumiaki Ichimori
Publikováno v:
Journal of Crystal Growth. 150:1302-1306
We have newly developed Hall elements consisting of Si-doped InAs thin film grown on GaAs substrate by molecular beam epitaxy (MBE). By doping Si into the layer of InAs thin films far from the InAs/GaAs interface, InAs thin films with high electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab804c7c97b481c8da7bf4dedee0da70
https://doi.org/10.1016/0022-0248(95)80149-7
https://doi.org/10.1016/0022-0248(95)80149-7