Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Kazuhiro Karahashi"'
Autor:
Akiko Hirata, Masanaga Fukasawa, Jomar U. Tercero, Katsuhisa Kugimiya, Yoshiya Hagimoto, Kazuhiro KARAHASHI, Satoshi Hamaguchi, Hayato Iwamoto
Publikováno v:
Japanese Journal of Applied Physics.
Atomic layer etching (ALE) has been practically implemented as a technique to achieve atomic/molecular level control. However, its main disadvantage is that it involves a long time. The surface reaction mechanism required to realize high-throughput S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::733ec72d54156875905a83f7a9931d6a
https://doi.org/10.35848/1347-4065/accde6
https://doi.org/10.35848/1347-4065/accde6
Autor:
Satoshi Hamaguchi, Kazuhiro Karahashi
Publikováno v:
Vacuum and Surface Science. 63:616-622
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82737c9a63024ab9ee25068ea9aaa0b
https://doi.org/10.1380/vss.63.616
https://doi.org/10.1380/vss.63.616
Autor:
Karsten Arts, Satoshi Hamaguchi, Tomoko Ito, Kazuhiro Karahashi, Harm C M Knoops, Adriaan J M Mackus, Wilhelmus M M (Erwin) Kessels
Publikováno v:
Plasma Sources Science and Technology, 31(10):103002. Institute of Physics
This article discusses key elementary surface-reaction processes in state-of-the-art plasma etching and deposition relevant to nanoelectronic device fabrication and presents a concise guide to the forefront of research on plasma-enhanced atomic layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::597878adacb34c00f111dfdc476e1945
https://doi.org/10.1088/1361-6595/ac95bc
https://doi.org/10.1088/1361-6595/ac95bc
Publikováno v:
Japanese Journal of Applied Physics. 61:SI1011
Precise control of silicon nitride (SiN) film quality is required for SiN plasma-enhanced atomic layer deposition (PEALD) processes. In this study, we examined the interactions of SiCl4 adsorbed Si surfaces with incident ions in the desorption/nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac18a3d17427748c95721885cafbc3ed
https://doi.org/10.35848/1347-4065/ac629b
https://doi.org/10.35848/1347-4065/ac629b
Autor:
Akiko Hirata, Masanaga Fukasawa, Jomar U. Tercero, Katsuhisa Kugimiya, Yoshiya Hagimoto, Kazuhiro Karahashi, Satoshi Hamaguchi, Hayato Iwamoto
Publikováno v:
Japanese Journal of Applied Physics. 61:066002
Atomic layer etching is an advanced plasma etching technique that enables the atomic-precision control. In this study, the effects of surface conditions on the stability of the etched amount per cycle (EPC) in silicon nitride (SiN) plasma-enhanced at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c9f5faf89ae172e044431f67469e71
https://doi.org/10.35848/1347-4065/ac61f6
https://doi.org/10.35848/1347-4065/ac61f6
Autor:
Akiko Hirata, Masanaga Fukasawa, Katsuhisa Kugimiya, Kazuhiro Karahashi, Satoshi Hamaguchi, Yoshiya Hagimoto, Hayato Iwamoto
Publikováno v:
Japanese Journal of Applied Physics. 61:SI1003
Damage to the underlying Si substrate during the over-etching step of SiN atomic layer etching (ALE) was investigated. CH3F/Ar plasma was applied in the adsorption step, and Ar plasma in the desorption step. ALE increased interface trap density (D it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebd4e11925a0531f1b690decd706a81
https://doi.org/10.35848/1347-4065/ac6052
https://doi.org/10.35848/1347-4065/ac6052
Autor:
Karin Fink, Marjan Krstić, Satoshi Hamaguchi, Abdulrahman H. Basher, Tomoko Ito, Wolfgang Wenzel, Kazuhiro Karahashi
Publikováno v:
Journal of vacuum science & technology / A, 38 (5), Art.Nr. 052602
Abdulrahman H. Basher, Marjan Krstić, Takae Takeuchi, Michiro Isobe, Tomoko Ito, Masato Kiuchi, Kazuhiro Karahashi1, Wolfgang Wenzel, and Satoshi Hamaguchi, Journal of Vacuum Science & Technology A 38:2, (2020); licensed under a Creative Commons Att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a68ee179893ac2431dbf9d9a42726a
Autor:
Abdulrahman H. Basher, Wolfgang Wenzel, Tomoko Ito, Kazuhiro Karahashi, Satoshi Hamaguchi, Michiro Isobe, Masato Kiuchi, Marjan Krstić, Takae Takeuchi
Publikováno v:
Journal of vacuum science & technology / A, 38 (2), Article: 022610
Abdulrahman H. Basher, Marjan Krstić, Takae Takeuchi, Michiro Isobe, Tomoko Ito, Masato Kiuchi, Kazuhiro Karahashi, Wolfgang Wenzel, and Satoshi Hamaguchi, Journal of Vacuum Science & Technology A 38:2, (2020); licensed under a Creative Commons Attr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecd63b8959415a57e0d6dbb6513ade9a
https://publikationen.bibliothek.kit.edu/1000118018
https://publikationen.bibliothek.kit.edu/1000118018
Autor:
Marjan Krstić, Abdulrahman H. Basher, Satoshi Hamaguchi, Wolfgang Wenzel, Kazuhiro Karahashi, Tomoko Ito, Karin Fink
Publikováno v:
Journal of Vacuum Science & Technology A. 39:057001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc8492fc1481fa3e93009caf003383a1
https://doi.org/10.1116/6.0001319
https://doi.org/10.1116/6.0001319
Publikováno v:
Journal of Vacuum Science & Technology B. 39:043203
Silicon (Si)-based materials such as Si and silicon dioxide ( SiO 2) are commonly used as basic components of advanced semiconductor devices. For example, alternating stacks of poly-Si and SiO 2 layers are used in three-dimensional (3D) NAND flash me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ae71ab5a818bb451e340381f6d3544
https://doi.org/10.1116/6.0001230
https://doi.org/10.1116/6.0001230