Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Kazuhiro Gotoh"'
Autor:
Haitao Wang, Yasuyoshi Kurokawa, Jia-Han Zhang, Kazuhiro Gotoh, Xin Liu, Satoru Miyamoto, Noritaka Usami
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 017005 (2024)
Wearable energy harvesters (WEHs) have garnered significant attention recently due to their promising capabilities in powering wearable devices. In this research, we present a core–shell yarn-structured triboelectric nanogenerator (CY-TENG) that op
Externí odkaz:
https://doaj.org/article/eca653f30c4843309e0c10484866fee9
Autor:
Michinobu Fujiwara, Kazuma Takahashi, Yoshihiko Nakagawa, Kazuhiro Gotoh, Takashi Itoh, Yasuyoshi Kurokawa, Noritaka Usami
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045115-045115-7 (2022)
The effect of low growth rate deposition (LGD) of BaSi2 on the film quality and performance of silicon heterojunction solar cells was investigated. The total thickness of the BaSi2 layer decreased with increasing LGD duration (tLGD). Analysis using R
Externí odkaz:
https://doaj.org/article/a1f2d46ea38d4d23880f0c16563baa8b
Autor:
Ryushiro Akaishi, Kohei Kitazawa, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020)
Abstract Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-d
Externí odkaz:
https://doaj.org/article/a15ec5e0365e42c3b989a3e44fbe696e
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract Silicon nanowires (SiNWs) show a great potential for energy applications because of the optical confinement effect, which enables the fabrication of highly efficient and thin crystalline silicon (c-Si) solar cells. Since a 10-μm-long SiNW a
Externí odkaz:
https://doaj.org/article/9a41d8bef1d74b06929fcb68899fadd7
Autor:
Masanori Semma, Kazuhiro Gotoh, Markus Wilde, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065008-065008-9 (2020)
We report on the effect of sputtering deposition of indium tin oxide (ITO) as the transparent conductive oxide layer on the passivation performance of hydrogenated amorphous silicon/crystalline silicon heterojunctions. The influence of sputtering dam
Externí odkaz:
https://doaj.org/article/fe108c2b736b44b7ba87d1439b9aff19
Autor:
Ryota Nezasa, Kazuhiro Gotoh, Shinya Kato, Satoru Miyamoto, Noritaka Usami, Yasuyoshi Kurokawa
Publikováno v:
Energies, Vol 14, Iss 15, p 4538 (2021)
Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al2O3/TiO2/Al2O3 (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and atomic layer deposition (ALD). High-angle annular dark field scannin
Externí odkaz:
https://doaj.org/article/99e6eadca3f349289640c20ed32fd56f
Autor:
Kazuhiro Gotoh, Markus Wilde, Shinya Kato, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075115-075115-7 (2019)
We studied the effect of deposition temperature on the hydrogen distribution and the passivation performance of hydrogenated amorphous silicon (a-Si:H) coated crystalline silicon (c-Si) heterojunctions as a model of high efficiency solar cell structu
Externí odkaz:
https://doaj.org/article/67cdbb6cdf39417fad5052a21e32fc6a
Autor:
Zhihao Xu, Kazuhiro Gotoh, Tianguo Deng, Takuma Sato, Ryota Takabe, Kaoru Toko, Noritaka Usami, Takashi Suemasu
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055306-055306-6 (2018)
We studied the surface passivation effect of hydrogenated amorphous silicon (a-Si:H) layers on BaSi2 films. a-Si:H was formed by an electron-beam evaporation of Si, and a supply of atomic hydrogen using radio-frequency plasma. Surface passivation eff
Externí odkaz:
https://doaj.org/article/e0c6f51f0b534c6483948f4fc2ea8241
Publikováno v:
Applied Sciences, Vol 9, Iss 5, p 818 (2019)
This study proposes metal-assisted chemical etching (MAE) as a facile method to fabricate silicon nanowire (SiNW) array structures, with high optical confinement for thin crystalline silicon solar cells. Conventional SiNW arrays are generally fabrica
Externí odkaz:
https://doaj.org/article/32aebf2af63842be9af38230c5ee10e0
Autor:
Kazuhiro GOTOH, Noritaka USAMI
Publikováno v:
Vacuum and Surface Science. 66:86-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6011cd802cb9bb7f01e5cc39a39fb81
https://doi.org/10.1380/vss.66.86
https://doi.org/10.1380/vss.66.86