Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Kazuhiko Sugiura"'
Autor:
Kazuhiko Sugiura, Takao Oi, Toshiharu Tanaka, Aoi Hamagashira, Rachana Ouk, Mitsuru Nakamura, Yasuto Ide, Kengo Tsuda, Akira Ito, Akira Yamauchi
Publikováno v:
Plant Production Science, Vol 0, Iss 0 (2022)
Pecky rice incidence caused by rice stink bugs greatly decreases the quality of rice grain and has come a big problem not only in Japan but also many other rice producing countries recently. In this study, antixenosis and tolerance were examined as t
Externí odkaz:
https://doaj.org/article/56038f12451947688158a96a39dddef4
Publikováno v:
Plant Production Science, Vol 14, Iss 3, Pp 282-290 (2011)
Formation of chalky grains which is the main cause of the degradation of rice grain quality occurs frequently when the temperature during the 20 days after heading exceeds 27ºC. In this study, we examined the grain quality, chalky grain formation, g
Externí odkaz:
https://doaj.org/article/3a7f65579d7544adbd26473d92df11d4
Autor:
Zheng Zhang, Chuantong Chen, Aiji Suetake, Hiroshi Ishino, Hirokazu Sampei, Takeshi Endo, Kazuhiko Sugiura, Kazuhiro Tsuruta, Katsuaki Suganuma
Publikováno v:
IEEE Transactions on Power Electronics. 38:1468-1478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f49201148624464da2427e9f96b83ce
https://doi.org/10.1109/tpel.2022.3209740
https://doi.org/10.1109/tpel.2022.3209740
Publikováno v:
Japanese Journal of Crop Science. 91:147-152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61fecfc04b29308bdbfe830ce02e9f5
https://doi.org/10.1626/jcs.91.147
https://doi.org/10.1626/jcs.91.147
Autor:
Kazuhiko Sugiura, Mitsuru Nakamura
Publikováno v:
Japanese Journal of Crop Science; 2023, Vol. 92 Issue 3, p199-208, 10p
Autor:
Zheng Zhang, Aiji Suetake, Chuantong Chen, Osamu Katayama, Hiroshi Ishino, Takeshi Endo, Kazuhiko Sugiura, Kazuhiro Tsuruta, Katsuaki Suganuma
Publikováno v:
2022 International Conference on Electronics Packaging (ICEP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35af2726fd3b911dc7fb821bdff4ab08
https://doi.org/10.23919/icep55381.2022.9795523
https://doi.org/10.23919/icep55381.2022.9795523
Thermal Resistance and Transient Thermal Analysis of SiC Power Module Using Ni Micro Plating Bonding
Autor:
Kazuhiro Tsuruta, Nobuaki Sato, Masahiro Kozako, Masakazu Inagaki, Kazuhiko Sugiura, Shimizu Koji, Kazutoshi Ueda, Keiji Toda, Tomonori Iizuka, Masayuki Hikita, Akihiro Imakiire, Kohei Tatsumi
Publikováno v:
IEEJ Transactions on Industry Applications. 139:838-846
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c419c0fb7427c05f257a71cd997b8810
https://doi.org/10.1541/ieejias.139.838
https://doi.org/10.1541/ieejias.139.838
Autor:
Chuantong Chen, Yuichi Sakuma, Takeshi Endo, Tohru Sugahara, Shijo Nagao, Tomohito Iwashige, Kazuhiko Sugiura, Yukinori Oda, Katsuaki Suganuma, Kazuhiro Tsuruta
Publikováno v:
Journal of Materials Science. 55:644-659
The application of Co-W-P plating technology in high-temperature package structure is advantageous from a point of structural reliability because Co-W-P metallization is known to deliver strong bonding to both high-temperature-compatible Ag-sintered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03e23e3a71c183b618d9ed54575e4c7
https://doi.org/10.1007/s10853-019-04028-z
https://doi.org/10.1007/s10853-019-04028-z
Autor:
Yuichi Sakuma, Yukinori Oda, Seigo Kurosaka, Kazuhiro Tsuruta, Katsuaki Suganuma, Kazuhiko Sugiura, Tomohito Iwashige, Chuantong Chen, Shijo Nagao, Takeshi Endo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:13247-13257
The use of a Co-W-P metallization substrate in SiC power modules is expected to improve high temperature reliability because Co-W-P metallization has been found to induce strong bonding strength to both sintered Ag joints and encapsulation resins. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f049bf48ba7b1c7affc293fe8875acd
https://doi.org/10.1007/s10854-019-01688-0
https://doi.org/10.1007/s10854-019-01688-0
Autor:
Yuichi Sakuma, Kazuhiko Sugiura, Yukinori Oda, Kazuhiro Tsuruta, Shijo Nagao, Seigo Kurosaka, Tomohito Iwashige, Chuantong Chen, Katsuaki Suganuma, Takeshi Endo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:11151-11163
One of the applications of wide band gap semiconductors is high temperature operation. That application requires high temperature compatible (i) joining materials such as sinter Ag, (ii) encapsulation resins such as imide type primers or molding comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bcd5a8963581d46fa9db532d5b86831
https://doi.org/10.1007/s10854-019-01458-y
https://doi.org/10.1007/s10854-019-01458-y