Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Kazuhiko Kashima"'
Autor:
Taketsugu Sawamura, Kazuhiko Kashima, Kyoko Nagai, Daiki Takeda, Tsunetoshi Saito, Kouhei Umeta, Masayoshi Kimura, Hideyuki Nasu, Thudsalingkarnsakul, Nitidet, Suksomboon, Rattanaporn, Anantathanasarn, Sanguan
Publikováno v:
Furukawa Electric Review; 2024, Issue 55, p46-52, 7p
Autor:
Taketsugu Sawamura, Kyoko Nagai, Kazuhiko Kashima, Kohei Umeta, Daiki Takeda, Tsunetoshi Saito, Hideyuki Nasu
Publikováno v:
2023 Optical Fiber Communications Conference and Exhibition (OFC).
We report an 8-channel CWDM TOSA designed for CPO ELS modules adopted with a blind mate optical connector. The mechanical size of the TOSA is as small as 22.5 mm × 13.0 mm × 4.0 mm to be built in a standard QSFP housing. The pigtailed PMF cables ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::297b6efcd48576f6deaec808425a314a
https://doi.org/10.23919/ofc49934.2023.10117440
https://doi.org/10.23919/ofc49934.2023.10117440
Autor:
Taketsugu Sawamura, Kazuhiko Kashima, Kyoko Nagai, Nitidet Thudsalingkarnsakul, Rattanaporn Suksomboon, Sanguan Anantathanasarn, Hideyuki Nasu
Publikováno v:
2022 IEEE CPMT Symposium Japan (ICSJ).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291e3bf97bd10206043da87e495cc3e5
https://doi.org/10.1109/icsj55786.2022.10034719
https://doi.org/10.1109/icsj55786.2022.10034719
Publikováno v:
ECS Transactions. 72:57-63
Introduction Increasing the bulk lifetime of silicon crystals is crucial for improving insulated-gate bipolar transistor (IGBT) properties such as on-resistance. In order to achieve a longer bulk lifetime, carbon and oxygen impurities in silicon crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d330041e094d5120999151ff7d6e1842
https://doi.org/10.1149/07204.0057ecst
https://doi.org/10.1149/07204.0057ecst
Autor:
Hiroshi Uchida, Koji Izunome, Osamu Nakatsuka, Kazuhiko Kashima, Eiji Kamiyama, Shigeaki Zaima, Koji Sueoka, Kengo Terasawa, Takashi Yamaha
Publikováno v:
Thin Solid Films. 592:54-58
We analyzed the incorporation of C atoms into a ternary alloy Ge 1 − x − y Sn x C y epitaxial film on Ge substrates on a sub-nanometer scale by using atom probe tomography. Periodic atom distributions from individual (111) atomic planes were obse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570fc8bcc419d01b7a518d6b645dac3e
https://doi.org/10.1016/j.tsf.2015.09.002
https://doi.org/10.1016/j.tsf.2015.09.002
Publikováno v:
Solid State Phenomena. 242:3-9
Reducing the carbon concentration in Czochralski (CZ) silicon crystals is crucial in order to improve the properties of high-power devices, such as on-resistance and carrier lifetime. To achieve carbon concentration reduction, it is necessary to redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65cc11342c7f20739781754235b53af9
https://doi.org/10.4028/www.scientific.net/ssp.242.3
https://doi.org/10.4028/www.scientific.net/ssp.242.3
Autor:
Satoko Nakagawa, Kazuhiko Kashima
Publikováno v:
physica status solidi c. 11:1597-1600
The calibration curve for the carbon concentration in silicon epitaxial layers was obtained by photo-luminescence spectroscopy after carbon ion implantation and electron irradiation. Low carbon concentrations on the order of 1014 atoms/cm3 affected p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3227e4852b746b6448db8c91ed9bfc5
https://doi.org/10.1002/pssc.201400046
https://doi.org/10.1002/pssc.201400046
Autor:
Hiroyuki Saito, Shotaro Baba, Yoshihiko Saito, Hiroshi Yamada-Kaneta, K. Mitsumoto, Terutaka Goto, Kazuhiko Kashima, Yuichi Nemoto, Mitsuhiro Akatsu, Kazuki Okabe
Publikováno v:
ECS Transactions. 64:13-18
For the samples taken from the void region of the CZ silicon crystal grown with the same solidification condition and different thermal histories after the solidification, we measure the magnitude S of the elastic softening which is proportional to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32a53b2d4dd897ddcac96e2c7477ad0
https://doi.org/10.1149/06411.0013ecst
https://doi.org/10.1149/06411.0013ecst
Autor:
Noriyuki Taoka, Koji Izunome, Eiji Kamiyama, Koji Sueoka, Osamu Nakatsuka, Kazuhiko Kashima, Shigeaki Zaima
Publikováno v:
Thin Solid Films. 557:173-176
We investigated the position of Sn atoms in Ge1 − xSnx film grown at a low temperature by using the Extended X-ray Absorption Fine Structure (EXAFS) method. Vacancies had been expected to be introduced near the growing surface vicinity of a Sn atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc85cae299cc44fe67ecc1745c31469a
https://doi.org/10.1016/j.tsf.2013.10.070
https://doi.org/10.1016/j.tsf.2013.10.070
Publikováno v:
Journal of Crystal Growth. 318:196-199
The generation mechanism of pinhole defects in the Czochralski (CZ)-grown silicon (Si) single crystals was clarified by in-situ observations of bubble formation at the interface between Si melt and a silica glass crucible in a small experimental appa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9692c8f33a44f14dde20444f0bce8d35
https://doi.org/10.1016/j.jcrysgro.2010.10.075
https://doi.org/10.1016/j.jcrysgro.2010.10.075