Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kazuhiko Fuse"'
Autor:
N. Hamamoto, Ippei Kobayashi, S. Kato, Hideaki Tanimura, T. Nagayama, Hikaru Kawarazaki, S. Sakai, M. Abe, T. Aoyama, Kazuhiko Fuse, Y. Ito
Publikováno v:
MRS Advances. 2:2921-2926
We report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8531644a154ebee8a2265a5671cb43e
https://doi.org/10.1557/adv.2017.388
https://doi.org/10.1557/adv.2017.388
Autor:
Hideaki Tanimura, Shinichi Kato, Kazuhiko Fuse, Yoshihide Nozaki, Ippei Kobayasi, Takayuki Aoyama
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Flash Lamp Annealing (FLA) is a well-known technique for millisecond annealing. In forming ultra-shallow junctions, FLA can provide high activation levels with precise diffusion control in the nanometer range. Currently, devices with 3D structures re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be5dc5c1da73ad08f632e3d1cdcbc88
https://doi.org/10.1109/iit.2018.8807947
https://doi.org/10.1109/iit.2018.8807947
Autor:
Hideaki Tanimura, Kenji Inoue, Shinichi Kato, Takayuki Aoyama, Hikaru Kawarazaki, Ippei Kobayashi, Takahiro Yamada, Kazuhiko Fuse
Publikováno v:
2018 18th International Workshop on Junction Technology (IWJT).
We are developing a new flash lamp annealing (FLA) system featuring flash lamps with short duration and high output power for all CMOS technology nodes including advanced devices. With this system, we can realize lower thermal budgets and higher peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85207a7e1207dfc6f1eeeea3a7adc797
https://doi.org/10.1109/iwjt.2018.8330287
https://doi.org/10.1109/iwjt.2018.8330287
Autor:
Shinichi Kato, Ippei Kobayashi, Timothee Julien Vincent Blanquart, Hideaki Tanimura, Takayuki Aoyama, Takahiro Yamada, Kazuhiko Fuse, Nadine Collaert
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
In recent years Solid Source Doping (SSD) has been considered as a viable option in fabricating advanced CMOS devices [1], especially for forming shallow and highly doped junctions for source drain extensions (SDE) while minimizing the damage to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63cb1daf582c1732deee51d918165a7f
https://doi.org/10.23919/iwjt.2017.7966501
https://doi.org/10.23919/iwjt.2017.7966501
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
We demonstrated the formation of ultra-shallow n+/p junctions in Si using an arsenic-doped Sol-Gel Coating (SGC) (Tokyo Ohka Kogyo Co., Ltd.) [1] and Flash Lamp Annealing (FLA). A high arsenic dopant concentration of 1.2×1020atoms/cm3 (Xj=9.0nm, Rs=
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd9c2bf9872585dc036b079e6098102
https://doi.org/10.23919/iwjt.2017.7966517
https://doi.org/10.23919/iwjt.2017.7966517
Autor:
Hikaru Kawarazaki, Takahiro Yamada, Kazuhiko Fuse, A. Ueda, Takayuki Aoyama, Y. Ito, Y. Ono, Ippei Kobayashi, Hideaki Tanimura, Shinichi Kato, Hiroshi Onoda, Nariaki Hamamoto, Tsutomu Nagayama, Shigeki Sakai, M. Abe, Masashi Furukawa, Yoshiki Nakashima
Publikováno v:
2016 16th International Workshop on Junction Technology (IWJT).
In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84544d9c714fd269c86dd77ae46bfeec
https://doi.org/10.1109/iwjt.2016.7486678
https://doi.org/10.1109/iwjt.2016.7486678
Autor:
Kazuhiko Fuse, Masaya Asai, Hiroki Kiyama, Akihiko Morita, Julius Joseph Santillan, Koji Kaneyama, Toshiro Itani
Publikováno v:
SPIE Proceedings.
The reduction of line width roughness (LWR) remains a difficult issue for very fine patterns obtained with extreme ultraviolet (EUV) lithography. Thus, the investigation of LWR-reduction from the viewpoint of resist processing has become necessary. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::392a90533fefcbc75a8f9dfb5205b6f1
https://doi.org/10.1117/12.916342
https://doi.org/10.1117/12.916342
Publikováno v:
YAKUGAKU ZASSHI. 98:376-381
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01d1f6a6272384793dcde9796c772730
https://doi.org/10.1248/yakushi1947.98.3_376
https://doi.org/10.1248/yakushi1947.98.3_376