Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kazufumi Hirukawa"'
Autor:
Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski, Michal Bockowski, Jun Suda
Publikováno v:
Journal of Applied Physics. 132:130901
P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance of vertical GaN power devices. UHPA allows a high-temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c67f005e6cda55670a75565d0ad79e
https://doi.org/10.1063/5.0107921
https://doi.org/10.1063/5.0107921
Autor:
Masahiro Horita, Jun Suda, Akihiko Koura, Michal Bockowski, Tetsuo Narita, Hideki Sakurai, Tetsu Kachi, Nobuyuki Ikarashi, Keita Kataoka, Shinji Yamada, Kazufumi Hirukawa
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this study, we clarify the impact of annealing pressure and temperature of the ultra-high-pressure annealing (UHPA) as a post-implantation-annealing (PIA) on the acceptor activation for Mg-ions-implanted GaN samples. The pressure to prevent the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958472bbeb6f0261279c9b047e2da599
https://doi.org/10.1109/ispsd46842.2020.9170174
https://doi.org/10.1109/ispsd46842.2020.9170174
Autor:
Michal Bockowski, Tetsu Kachi, Kazufumi Hirukawa, Jun Suda, Kensuke Sumida, Hideki Sakurai, Masahiro Horita, Kacper Sierakowski
Publikováno v:
Applied Physics Express. 14:121004
We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6983fb41fbde6b4906e6106201e649
https://doi.org/10.35848/1882-0786/ac39b0
https://doi.org/10.35848/1882-0786/ac39b0
Autor:
Kacper Sierakowski, Masahiro Horita, Shinji Yamada, Kensuke Sumida, Jun Suda, Michal Bockowski, Nobuyuki Ikarashi, Keita Kataoka, Kazufumi Hirukawa, Tetsuo Narita, Tetsu Kachi, Hideki Sakurai
Publikováno v:
Applied Physics Express. 14:111001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::387d2dd485cb73ff7a5312912815bf32
https://doi.org/10.35848/1882-0786/ac2ae7
https://doi.org/10.35848/1882-0786/ac2ae7
Autor:
Michal Bockowski, Kacper Sierakowski, Kensuke Sumida, Jun Suda, Kazufumi Hirukawa, Yohei Otoki, Hideki Sakurai, Masahiro Horita, Hajime Fujikura, Tetsu Kachi
Publikováno v:
Applied Physics Express. 14:056501
Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96b6ebb9bbd2bb022866c410f19bbf5
https://doi.org/10.35848/1882-0786/abf4f3
https://doi.org/10.35848/1882-0786/abf4f3