Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kazuaki Takai"'
Autor:
Wensheng Wang, Takashi Eshita, Kazuaki Takai, Ko Nakamura, Mitsuaki Oikawa, Nozomi Sato, Soichiro Ozawa, Kouichi Nagai, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Manabu Kojima, Kenji Nomura, Hideshi Yamaguchi
Publikováno v:
International Journal of Electrical Engineering & Computing; Jun2024, Vol. 8 Issue 1, p1-8, 8p
Autor:
Wensheng Wang, Kazuaki Takai, Ko Nakamura, Mitsuaki Oikawa, Soichiro Ozawa, Kouichi Nagai, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Manabu Kojima, Takashi Eshita, Kenji Nomura, Hideshi Yamaguchi
Publikováno v:
2023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH).
Autor:
Wensheng Wang, Takashi Eshita, Kazuaki Takai, Kenji Nomura, Hideshi Yamaguchi, Ko Nakamura, Soichiro Ozawa, Kouichi Nagai, Junichi Watanabe, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Manabu Kojima
Publikováno v:
Japanese Journal of Applied Physics. 61:SN1013
We developed a lanthanum-doped Pb(Zr0.4,Ti0.6)O3 (PLZT)-based ferroelectric capacitor (FE) aiming at low-voltage operation of ferroelectric random access memory at low temperatures down to −45 °C. High-temperature sputter-deposited IrO x (1 < x <
Autor:
Wensheng Wang, Ko Nakamura, Takashi Eshita, Kenji Nomura, Kazuaki Takai, Hideshi Yamaguchi, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Manabu Kojima
Publikováno v:
Applied Physics Letters. 120:102901
We developed a lanthanum-doped Pb(Zr0.4,Ti0.6)O3 (PLZT)-based ferroelectric capacitor for low-voltage operation of ferroelectric memory for use in edge devices in the internet of things. The structure, consisting of PLZT stacked layers 30 and 90 nm t
Autor:
Keizo Morita, Yukinobu Hikosaka, Yasuhiro Fujii, Wensheng Wang, Mitsuhiro Ogai, Kazuaki Yamane, Kazuaki Takai, Shoichiro Kawashima, Inoue Kenichi, Kuninori Kawabata, Ryoji Yasuda, Mitsuharu Nakazawa
Publikováno v:
IEICE Transactions on Electronics. :1047-1057
Autor:
Ko Nakamura, Kazuaki Takai, Hideshi Yamaguchi, Takashi Eshita, Satoru Mihara, Manabu Kojima, Hitoshi Saito, Yuji Kataoka, Soichiro Ozawa, Yukinobu Hikosaka, Kenji Nomura, Wensheng Wang
Publikováno v:
Journal of Applied Physics. 126:074105
We reconstruct the interface between ferroelectric (FE) lanthanum-doped lead zirconate titanate (PLZT) and an iridium oxide (IrOx) top electrode (TE), taking advantage of the interdiffusion of Ir and Pb during postdeposition annealing. The tetragonal
Autor:
Hideshi Yamaguchi, Kenji Nomura, Yukinobu Hikosaka, Takashi Eshita, Soichiro Ozawa, Hitoshi Saito, Yuji Kataoka, Manabu Kojima, Kazuaki Takai, Wensheng Wang, Ko Nakamura, Junichi Watanabe, Satoru Mihara
Publikováno v:
Japanese Journal of Applied Physics. 58:016503
Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison other non-volatile memories. We tried to apply TiOx, and AlOx to an underlying layer (TiOx-UL
Autor:
Takashi Eshita, Wensheng Wang, Yuji Kataoka, Yukinobu Hikosaka, Hideshi Yamaguchi, Soichiro Ozawa, Ko Nakamura, Kenji Nomura, Manabu Kojima, Kazuaki Takai, Makoto Hamada, Satoru Mihara
Publikováno v:
Japanese Journal of Applied Physics. 57:11UF01
In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an important role in obtaining good electrical characteristics and high manufacturing yield of
Publikováno v:
Japanese Journal of Applied Physics. 47:4638-4642
To increase the density of memory devices, it is necessary to reduce the cell size. However, the smaller capacitors are made, the more difficult it becomes to measure their characteristics. Analysis of the electrical characteristics of single-bit cel
Autor:
Mitsuharu Nakazawa, Masaki Okuda, Kazuaki Takai, Hitoshi Saito, Satoru Mihara, Masato Matsumiya, Takashi Eshita, Tomoyuki Hori, Yukinobu Hikosaka, Ko Nakamura, Makoto Hamada, Shoichiro Kawashima, Soichiro Ozawa, Noboru Kosugi, Wensheng Wang, Tatsuya Sugimachi, Naoya Sashida
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed tripleprotection structured cell array, has constructed without an additional mask step, effectiv