The electrical behavior of GaAs-insulator interfaces: A discrete energy interface state model.

Autor: Kazior, T. E., Lagowski, J., Gatos, H. C.

Publikováno v: Journal of Applied Physics; May1983, Vol. 54 Issue 5, p2533-2539, 7p

W-band Metamorphic Low Noise and Power Amplifiers

Autor: Whelan, C. S., Herrick, K., Leoni, R. E., Marsh, P. F., Zhang, Y., Lardizabal, S., Hoke, W. E., Lichwala, S., Kotce, J., Balas, P., Kazior, T. E., Laighton, D.

Publikováno v: Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Low noise metamorphic amplifiers fabricated on our 4” manufacturing line demonstrate 3.5 dB oise figure at 92 GHz. By tailoring the device’s material, geometry and processing, our device designers have achieved 320 mW/mm, 10 dB of small signal ga

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More Than Moore: GaN HEMTs and Si CMOS Get It Together.

Autor: Kazior, T. E., LaRoche, J. R., Hoke, W. E.

Publikováno v: 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2013, p1-4, 4p

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS.

Autor: Lubyshev, D., Fastenau, J. M., Wu, Y., Synder, A., Liu, W. K., Bulsara, M. T., Fitzgerald, E. A., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Brar, B., Hoke, W. E., LaRoche, J. R., Torabi, A., Kazior, T. E., Smith, D., Clark, D., Thompson, R. F., Drazek, C.

Publikováno v: MRS Online Proceedings Library; 2009, Vol. 1194 Issue 1, p1-9, 9p

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy.

Autor: Hoke, W. E., Lyman, P. S., Labossier, W. H., Brierley, S. K., Hendriks, H. T., Shanfield, S. R., Aucoin, L. M., Kazior, T. E.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 3, p1066-1069, 4p