Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kazhihito Nishimura"'
Autor:
Qilong Yuan, Wei Wang, Wenrui Zhang, Mengting Qiu, Mingyang Yang, Zhenglin Jia, Bo Wang, Cheng-Te Lin, Kazhihito Nishimura, Keke Chang, Kuan W. A. Chee, Junfeng Cui, Nan Jiang
Publikováno v:
Functional Diamond, Vol 3, Iss 1 (2023)
In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (∼ 5.5 eV) and other superior semiconductor properties. However, the response region of diamond photodetector is usually
Externí odkaz:
https://doaj.org/article/058daa0d54444713b4ac314c51f2b252
A single-crystalline diamond X-ray detector based on direct sp3-to-sp2 conversed graphene electrodes
Autor:
Qilong Yuan, Linyue Liu, Dan Dai, Yuhong Zhou, Ying Liu, Mingyang Yang, Mengting Qiu, Zhenglin Jia, He Li, Kazhihito Nishimura, Geng Tian, Kuan W. A. Chee, Shiyu Du, Cheng-Te Lin, Nan Jiang, Xiaoping Ouyang
Publikováno v:
Functional Diamond, Vol 2, Iss 1, Pp 94-102 (2022)
Diamond is an ultrawide bandgap semiconductor with excellent electronic and photonic properties, which has great potential applications in microelectronic and optoelectronic devices. As an allotrope of diamond, graphene also has many fantastic proper
Externí odkaz:
https://doaj.org/article/63e9121bd1ed4556982a8beb751af8a2
Autor:
Mengting Qiu, Zhenglin Jia, Mingyang Yang, Kazhihito Nishimura, Cheng-Te Lin, Nan Jiang, Qilong Yuan
Publikováno v:
Nanotechnology. 34:285204
As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimension
Autor:
Junfeng Ying, Nan Jiang, Jinhong Yu, Cheng-Te Lin, Ma Hongbing, Shigeo Maruyama, Te-Huan Liu, Le Lv, Ching-Ping Wong, Rong Xiang, He Li, Wen Dai, Xiangze Wang, Qingwei Yan, Jingyao Gao, Rong Sun, Kazhihito Nishimura, Xue Tan
Publikováno v:
ACS nano. 15(8)
As the power density and integration level of electronic devices increase, there are growing demands to improve the thermal conductivity of polymers for addressing the thermal management issues. On the basis of the ultrahigh intrinsic thermal conduct
Autor:
Yunxiang Lu, Cao Yang, Jilei Lyu, Jian Yi, Bo Wang, Nan Jiang, Lars Ojamäe, Pitsiri Sukkaew, Andreas Rosenkranz, He Li, Guichen Song, Kazhihito Nishimura, Jia Wang
4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::277c57173d5af52962f8e441bc588c31
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-168249
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-168249
Publikováno v:
Surface Engineering. 35:91-95
Multiple single crystal diamonds (SCDs) were first synthesised on 24 high pressure high temperature (HPHT) synthetic type Ib (100) SCD seeds by direct current glow discharge plasma chemical vapour ...
Publikováno v:
Materials Science and Technology. 31:1919-1924
Diamond film was grown on high thermal conductivity graphite substrate using microwave plasma chemical vapour deposition method. Nanodiamond particles were uniformly seeded on the substrate to generate high nucleation density by a spray gun. The cont