Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Kazemi Esfeh , Babak"'
Autor:
Cardinael, Pieter, Yadav, Sachin, Hahn, Herwig, Zhao, Ming, Banerjee, Sourish, Kazemi Esfeh, Babak, Mauder, Christof, O'Sullivan, Barry, Peralagu, Uthayasankaran, Vohra, Anurag, Langer, Robert, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre
Publikováno v:
Applied Physics Letters; 8/12/2024, Vol. 125 Issue 7, p1-7, 7p
Autor:
Kilchytska, Valeriya, Makovejev, Sergej, Kazemi Esfeh , Babak, Nyssens, Lucas, Halder, Arka, Raskin, Jean-Pierre, Flandre, Denis, 2020 IEEE Latin America Electron Devices Conference (LAEDC)
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
This invited paper reviews main approaches in the electrical characterization of advanced MOSFETs towards their target analog and RF applications. Advantages and necessity of those techniques will be demonstrated on different study cases of various a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23cf69ffa0dc336326bf6baf1c1c2661
https://doi.org/10.1109/laedc49063.2020.9073536
https://doi.org/10.1109/laedc49063.2020.9073536
Publikováno v:
Solid-State Electronics, Vol. 169, p. 107817 (2020)
We present experimental results for junctionless nanowire transistors (JNTs) with different gate alignments to the nanowire. Devices with nanowire source/drain extensions (NSDE) show high series source/drain resistance due to the low doped nanowire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::f8579b33ba1af57c153a0db2b7020d8d
https://hdl.handle.net/2078.1/237900
https://hdl.handle.net/2078.1/237900
Autor:
Kazemi Esfeh, Babak, Nyssens, Lucas, Halder, Arka, Kilchytska, Valeriya, Raskin, Jean-Pierre, Flandre, Denis, 3rd Symposium on Schottky barrier MOS devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::e772cb9da7aa8b96bcc8c2c8d44028de
https://hdl.handle.net/2078.1/220528
https://hdl.handle.net/2078.1/220528
Autor:
Nyssens, Lucas, Halder, Arka, Kazemi Esfeh, Babak, Planes, Nicolas, Haond, Michel, Flandre, Denis, Raskin, Jean-Pierre, Kilchytska, Valeriya, 49th European Solid-State Device Research Conference (ESSDERC 2019)
This work studies, for the first time to the authors’ best knowledge, the self-heating (SH) effect in ultra-thin body ultra-thin BOX (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::0c21329e212705912b32b8cf051a4705
https://hdl.handle.net/2078.1/223543
https://hdl.handle.net/2078.1/223543
Autor:
Van Brandt, Léopold, Kazemi Esfeh, Babak, Kilchytska, Valeriya, Flandre, Denis, 5th joint EUROSOI – ULIS 2019 Conference
We present a new methodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise components from set-up noise. We illustrate it for a strong RTN case (∆ID/ID ≈ 30 %) measured on a 26 nm gate length nMOS transistor. The approach i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::cd9a86caf8f8d9aa0bf1c791311fd46e
https://hdl.handle.net/2078.1/216180
https://hdl.handle.net/2078.1/216180
Autor:
Kazemi Esfeh, Babak, Masselus, Matthieu, Planes, N., Haond, M., Raskin, Jean-Pierre, Flandre, Denis, Kilchytska, Valeriya, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2017
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures. Electrostatic, Analog and RF Figures of Merit (FoM) are studied for the first time to our best knowledge. At cryogenic temperatures, 30-50% enhancem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::22a969655d9a768614d21ad4adc2ff81
https://hdl.handle.net/2078.1/197096
https://hdl.handle.net/2078.1/197096
Autor:
Kazemi Esfeh, Babak, Kilchytska, Valeriya, Planes, N., Haond, M., Flandre, Denis, Raskin, Jean-Pierre, IEEE S3S Conference
This work presents, for the first time to our best knowledge, RF characterization of 28 nm FDSOI CMOS process at cryogenic temperatures including extraction of parasitic elements of small-signal equivalent circuit and two main RF Figures of Merit (Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::330560bbeecbd4098e99526810710ee9
https://hdl.handle.net/2078.1/212205
https://hdl.handle.net/2078.1/212205
Autor:
Kazemi Esfeh, Babak, Makovejev S., Allibert F., Raskin, Jean-Pierre, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::9cfc2255e3feb58ea7dcbcda2977def9
https://hdl.handle.net/2078.1/219183
https://hdl.handle.net/2078.1/219183
Autor:
Kazemi Esfeh, Babak, Kilchytska, Valeriya, Parvais, Bertrand, Planes, Nicolas, Haond, M., Flandre, Denis, Raskin, Jean-Pierre, 2017 47th European Solid-State Device Research Conference (ESSDERC 2017)
Publikováno v:
proceedings of ESSDERC 2017
This work investigates experimentally the non-linearities of FDSOI MOSFETs from DC to RF frequencies. The effect of the back-gate bias on non-linearity of the device is studied by means of 2nd and 3rd harmonic distortions (HD2 and HD3) extracted from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::ad3f5e42df7bcf5387e3d94e70e81bc4
https://hdl.handle.net/2078.1/190972
https://hdl.handle.net/2078.1/190972