Zobrazeno 1 - 10
of 932
pro vyhledávání: '"Kaya Ismet"'
Autor:
Demir Ramazan, Kaya Ismet
Publikováno v:
Open Chemistry, Vol 16, Iss 1, Pp 937-943 (2018)
The synthesized Schiff base polymers were investigated for humidity and chloroform response characteristics. The crystal structure of polymers were analyzed using X-ray diffraction (X-RD) method. We used the QCM (quartz crystal microbalance) method f
Externí odkaz:
https://doaj.org/article/c8715af4350f401e8abb8ea0c1e8467c
Autor:
Okamoto, Hiroshi, Firouzmandi, Reza, Miyamura, Ryosuke, Sazgari, Vahid, Okumura, Shun, Uchita, Shota, Kaya, Ismet I.
Publikováno v:
Micron 161, 103330 (2022)
We present a case for developing a millikelvin-temperature transmission electron microscope (TEM). We start by reviewing known reasons for such development, then present new possibilities that have been opened up by recent progress in superconducting
Externí odkaz:
http://arxiv.org/abs/2209.01537
Publikováno v:
In European Polymer Journal 15 November 2024 220
Autor:
Ahmadi, Vahid Ebrahimpour, Guler, Tayfun, Amin, Saifa, Apak, Ahmet Muhtar, Apak, Alper, Parlak, Murat, Tastan, Umur, Kaya, Ismet Inonu, Sadaghiani, Abdolali, Koşar, Ali
Publikováno v:
In International Journal of Heat and Mass Transfer 1 September 2024 229
Autor:
Kolcu, Feyza, Kaya, İsmet
Publikováno v:
In Dyes and Pigments August 2024 227
Autor:
Çağlar Dalyan, Aysel, Kaya, İsmet
Publikováno v:
In European Polymer Journal 17 July 2024 215
Publikováno v:
In Journal of Photochemistry & Photobiology, A: Chemistry 1 April 2024 449
Publikováno v:
Phys. Rev. B 103, 085437 (2021)
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pres
Externí odkaz:
http://arxiv.org/abs/2006.11797
Publikováno v:
In Reactive and Functional Polymers December 2023 193
Publikováno v:
Phys. Rev. B 101, 155302 (2020)
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localiz
Externí odkaz:
http://arxiv.org/abs/1911.11895