Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Kaya, Ismet I."'
Autor:
Okamoto, Hiroshi, Firouzmandi, Reza, Miyamura, Ryosuke, Sazgari, Vahid, Okumura, Shun, Uchita, Shota, Kaya, Ismet I.
Publikováno v:
Micron 161, 103330 (2022)
We present a case for developing a millikelvin-temperature transmission electron microscope (TEM). We start by reviewing known reasons for such development, then present new possibilities that have been opened up by recent progress in superconducting
Externí odkaz:
http://arxiv.org/abs/2209.01537
Publikováno v:
Phys. Rev. B 103, 085437 (2021)
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pres
Externí odkaz:
http://arxiv.org/abs/2006.11797
Publikováno v:
Phys. Rev. B 101, 155302 (2020)
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to weak localiz
Externí odkaz:
http://arxiv.org/abs/1911.11895
Publikováno v:
Phys. Rev. B 100, 041404(R) (2019)
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due to non-tri
Externí odkaz:
http://arxiv.org/abs/1910.10517
Autor:
Yanik, Cenk, Kaya, Ismet I.
Publikováno v:
Solid State Communications 160 (2013) 47-51
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is w
Externí odkaz:
http://arxiv.org/abs/1302.4729
We demonstrate a technique to produce thin graphene layers on C-face of SiC under ultra high vacuum conditions. A stack of two SiC substrates comprising a half open cavity at the interface is used to partially confine the depleted Si atoms from the s
Externí odkaz:
http://arxiv.org/abs/1109.1726
Akademický článek
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Publikováno v:
In Applied Surface Science 1 January 2013 264:56-60
Publikováno v:
In Carbon July 2012 50(8):3026-3031
Akademický článek
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